TEMPFET
®
BTS 120
Features
q
q
q
q
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shortet to the tab
1
2
3
Pin
1
G
2
D
3
S
Type
BTS 120
V
DS
100 V
I
D
19 A
R
DS(on)
0.1
Ω
Package
TO-220AB
Ordering Code
C67078-A5009-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
Continuous drain current,
T
C
= 25
°C
ISO drain current
T
C
= 85
°C,
V
GS
= 10 V,
V
DS
= 0.5 V
Pulsed drain current,
Short circuit current,
Symbol
Values
100
100
±
20
19
3.5
76
55
800
75
– 55 ... + 150
E
55/150/56
K/W
≤
1.67
≤
75
°C
–
W
A
Unit
V
V
DS
V
DGR
V
GS
I
D
I
D-ISO
I
D puls
I
SC
P
SCmax
P
tot
T
j
,
T
stg
–
–
T
C
= 25
°C
T
j
= – 55 ... + 150
°C
Short circuit dissipation,
T
j
= – 55 ... + 150
°C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
R
th JC
R
th JA
Semiconductor Group
1
04.97
BTS 120
Electrical Characteristics
at
T
j
= 25
°C,
unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0
, I
D
= 0.25 mA
Gate threshold voltage
V
GS
=
V
DS
, I
D
= 1 mA
Zero gate voltage drain current
V
GS
= 0 V,
V
DS
= 100 V
T
j
= 25
°C
T
j
= 125
°C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
T
j
= 25
°C
T
j
= 150
°C
Drain-source on-state resistance
V
GS
= 10 V
, I
D
= 12 A
Dynamic Characteristics
Forward transconductance
V
DS
≥
2
×
I
D
×
R
DS(on)max
,
I
D
=12 A
Input capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Values
typ.
max.
Unit
V
(BR)DSS
100
–
3.0
–
3.5
V
V
GS(th)
2.5
I
DSS
–
–
1
100
10
300
µA
I
GSS
–
–
10
2
0.09
100
4
0.1
nA
µA
Ω
–
R
DS(on)
g
fs
7
13
1500
450
150
30
50
170
80
18
S
pF
–
2000
700
240
45
75
220
110
ns
C
iss
C
oss
–
C
rss
–
–
–
–
–
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
t
d(on)
V
CC
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
GS
= 50
Ω
t
r
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
t
d(off)
V
CC
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
GS
= 50
Ω
t
f
Semiconductor Group
2
BTS 120
Electrical Characteristics
(cont’d)
at
T
j
= 25
°C,
unless otherwise specified.
Parameter
Symbol
min.
Reverse Diode
Continuous source current
Pulsed source current
Diode forward on-voltage
I
F
= 38 A,
V
GS
= 0
Reverse recovery time
I
F
=
I
S
, d
i
F
/d
t
= 100 A/µs,
V
R
= 30 V
Reverse recovery charge
I
F
=
I
S
, d
i
F
/d
t
= 100 A/µs,
V
R
= 30 V
Temperature Sensor
Forward voltage
I
TS(on)
= 10 mA,
T
j
= – 55 ... + 150
°C
Sensor override,
t
p
≤
100
µs
T
j
= – 55 ... + 160
°C
Forward current
T
j
= – 55 ... + 150
°C
Sensor override,
t
p
≤
100
µs
T
j
= – 55 ... + 160
°C
Holding current,
V
TS(off)
= 5 V,
Switching temperature
V
TS
= 5 V
Turn-off time
V
TS
= 5 V,
I
TS(on)
= 2 mA
Values
typ.
max.
Unit
I
S
I
SM
V
SD
–
–
–
–
–
1.4
200
0.25
19
75
A
V
1.7
ns
–
µC
–
t
rr
–
Q
rr
–
V
TS(on)
–
–
1.4
–
–
–
0.1
0.2
–
–
1.5
10
V
I
TS(on)
–
–
10
600
0.5
0.3
mA
T
j
= 25
°C
T
j
= 150
°C
I
H
T
TS(on)
0.05
0.05
150
°C
–
µs
0.5
2.5
t
off
Semiconductor Group
3
BTS 120
Examples for short-circuit protection
at
T
j
= – 55 ... + 150
°C,
unless otherwise specified.
Parameter
Symbol
1
Examples
2
–
Unit
Drain-source voltage
Gate-source voltage
Short-circuit current
Short-circuit dissipation
Response time
T
j
= 25
°C,
before short circuit
V
DS
V
GS
I
SC
P
SC
t
SC(off)
15
7.3
53.3
800
25
30
5.7
26.7
800
25
–
–
–
–
–
V
A
W
ms
Short-circuit protection
I
SC
=
f
(
V
DS
)
Parameter
: V
GS
Diagram to determine
I
SC
for
T
j
= – 55 ... + 150°C
Max. gate voltage
V
GS(SC)
=
f
(
V
DS
)
Parameter:
T
j
= – 55 ... + 150
°C
Semiconductor Group
4
BTS 120
Max. power dissipation
P
tot
=
f
(
T
C
)
Typ. drain-source on-state resistance
R
DS(on)
=
f
(
I
D
)
Parameter
: V
GS
Typical output characteristics
I
D
=
f
(
V
DS
)
Parameter
: t
p
= 80
µs
Safe operating area
I
D
=
f
(
V
DS
)
Parameter:
D
= 0.01,
T
C
= 25
°C
Semiconductor Group
5
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