NTP5N60
Preferred Devices
Product Preview
Power MOSFET
5 Amps, 600 Volts
N−Channel TO−220
Features
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
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Higher Current Rating
Lower R
DS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter V
SD
Specifications
Avalanche Energy Specified
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
5 AMPERES
600 VOLTS
R
DS(on)
= 2400 mΩ
N−Channel
D
Typical Applications
G
S
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−Source Voltage
Drain−Gate Voltage (R
GS
= 1.0 MΩ)
Gate−Source Voltage
−
Continuous
−
Non−Repetitive (t
p
v10
ms)
Drain
−
Continuous @ T
A
25°C
−
Continuous @ T
A
100°C
−
Single Pulse (t
p
v10
μs)
Total Power Dissipation @ T
A
25°C
Derate above 25°C
Total Power Dissipation @ T
A
25°C
(Note 1.)
Operating and Storage
Temperature Range
Single Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 100 V, V
GS
= 10 Vdc,
I
L
(pk) = 5 A, L = 10 mH, V
DS
= 600
Vdc, R
G
= 25
Ω)
Thermal Resistance
−
Junction−to−Case
−
Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from case
for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GS
I
D
I
D
Value
600
600
"20
"40
5
3.8
17.5
96
0.77
1.75
−55
to
+150
80
Adc
Apk
Watts
W/°C
Watts
°C
mJ
1
2
Unit
Vdc
Vdc
Vdc
MARKING DIAGRAMS
AND PIN ASSIGNMENTS
Drain
4
I
DM
P
D
TO−220AB
CASE 221A
STYLE 5
NTP5N60
LLYWW
Gate
Source
Drain
3
NTP5N60
LL
Y
WW
T
J
, T
stg
E
AS
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
°C/W
Device
NTP5N60
Package
TO−220AB
Shipping
50 Units/Rail
R
θJC
R
θJA
T
L
1.3
62.5
260
°C
Preferred
devices are recommended choices for future use
and best overall value.
1. Repetitive rating; pulse width limited by maximum junction temperature.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 1
1
Publication Order Number:
NTP5N60/D
NTP5N60
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(V
GS
= 0 Vdc, I
D
= 250
μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 600 Vdc, V
GS
= 0 Vdc)
(V
DS
= 600 Vdc, V
GS
= 0 Vdc, T
J
=125°C)
Gate−Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (V
GS
= 10 Vdc, I
D
= 2.5 Adc)
Static Drain−to−Source On−Resistance
(V
GS
= 10 Vdc, I
D
= 5 Adc)
(V
GS
= 10 Vdc, I
D
= 2.5 Adc, T
J
= 125°C)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 2.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 400 Vdc, I
D
= 5 Adc,
V
GS
= 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1)
Reverse Recovery Time
(I
S
= 5 Adc, V
GS
= 0 Vdc,
di
S
/dt = 100 A/μs)
Reverse Recovery Stored
Charge
1. Pulse Test: Pulse Width
≤
300
μs,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
(I
S
= 5 Adc, V
GS
= 0 Vdc)
(I
S
= 5 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
t
rr
t
a
t
b
Q
RR
−
−
−
−
−
−
0.86
0.75
655
103
552
1.9
1.0
−
−
−
−
−
μC
Vdc
ns
(V
DD
= 300 Vdc, I
D
= 5 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1
Ω)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
12
7.0
19
10
5.0
2.7
2.0
20
10
40
20
10
−
−
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
540
125
8.0
780
180
20
pF
V
GS(th)
Vdc
2.0
−
−
−
−
0.7
2.7
6.0
2100
−
−
3.8
4.0
−
2400
14.4
13.1
−
mhos
mV/°C
mOhm
V
V
(BR)DSS
Vdc
600
−
−
−
−
−
700
−
−
−
−
−
10
100
±100
mV/°C
μAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
V
DS(on)
g
FS
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2
NTP5N60
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
−T−
B
4
SEATING
PLANE
F
T
C
S
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 5:
PIN 1.
2.
3.
4.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Phone:
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Fax:
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Email:
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For additional information, please contact your local
Sales Representative
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3
NTP5N60/D
嵌入式系统
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