NTP5864N
Power MOSFET
60 V, 63 A, 12.4 mW
Features
•
•
•
•
Low R
DS(on)
High Current Capability
Avalanche Energy Specified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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I
D
MAX
(Note 1)
63 A
V
(BR)DSS
60 V
R
DS(ON)
MAX
12.4 mΩ @ 10 V
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage −
Non−Repetitive (t
p
= 10
ms)
Continuous Drain
Current − R
qJC
(Note 1)
Power Dissipation −
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
DM
T
J
,
T
STG
I
S
EAS
IAS
T
L
P
D
Symbol
V
DSS
V
GS
V
GS
I
D
Value
60
±20
±30
63
45
107
54
252
−55 to
175
63
80
40
260
A
W
S
Units
V
V
V
A
G
N−Channel
D
t
p
= 10
ms
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
°
C
A
mJ
A
°C
TO−220AB
CASE 221A
STYLE 5
1
NTP5864NG
AYWW
3
Source
2
Drain
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) − Steady State
(Note 1)
Junction−to−Ambient − Steady State (Note 1)
Symbol
R
θJC
R
θJA
Max
1.4
33
Units
°C/W
°C/W
3
1
Gate
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
ORDERING INFORMATION
Device
NTP5864NG
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 1
Publication Order Number:
NTP5864N/D
NTP5864N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
R
g
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 20 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
1680
189
124
31
2.0
7.3
10
0.5
W
nC
pF
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
V
GS
= V
DS
, I
D
= 250
mA
2.0
−10
10.2
10
12.4
4.0
V
mV/°C
mW
S
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
V
GS
= 0 V, I
D
= 250
mA
60
58
1.0
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±20
V
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 20 A, R
G
= 2.5
W
10
6.4
18
4.6
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 40 A
T
J
= 25°C
T
J
= 125°C
0.94
0.84
24
V
GS
= 0 V, dI
SD
/dt = 100 A/ms,
I
S
= 20 A
16
7.9
20
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTP5864N
TYPICAL CHARACTERISTICS
125
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
100
7.5 V
7V
6.5 V
75
5.0 V
5.5 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
125
V
DS
≥
10 V
100
75
50
50
T
J
= 25°C
25
4.5 V
25
T
J
= 125°C
T
J
= −55°C
4
5
6
7
0
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
2
3
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.005
0.000
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 20 A
T
J
= 25°C
0.0115
V
GS
= 10 V
T
J
= 25°C
0.0110
0.0105
0.0100
0.0095
10
15
20
25
30
35
40
45
50
55
60
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 4. On−Resistance vs. Drain Current
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
I
D
= 20 A
V
GS
= 10 V
100000
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
10000
T
J
= 150°C
T
J
= 125°C
1000
100
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTP5864N
TYPICAL CHARACTERISTICS
2500
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
GS
= 0 V
T
J
= 25°C
C, CAPACITANCE (pF)
2000
C
iss
1500
10
Q
T
8
6
Q
gs
4
Q
gd
1000
500
0
0
C
rss
C
oss
2
0
0
5
10
15
20
I
D
= 20 A
T
J
= 25°C
25
30
10
20
30
40
50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
60
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 48 V
I
D
= 20 A
V
GS
= 10 V
100
t, TIME (ns)
t
d(off)
10
t
d(on)
t
r
t
f
100
90
80
70
60
50
40
30
20
10
0
0.40
V
GS
= 0 V
T
J
= 25°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.50
0.60
0.70
0.80
0.90
1.00
1.10 1.20
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
AVALANCHE ENERGY (mJ)
100
ms
1 ms
10 ms
dc
10
ms
80
70
60
50
40
30
20
10
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 40 A
I
D
, DRAIN CURRENT (A)
100
10
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
1
0.1
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTP5864N
TYPICAL CHARACTERISTICS
10
R
qJC(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
0.01
0.000001
t, PULSE TIME (s)
Figure 13. Thermal Response
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