4. Switching characteristics are independent of operating junction temperatures.
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2
NTMS4700N
TYPICAL PERFORMANCE CURVES
24 V
GS
= 10 V
I
D,
DRAIN CURRENT (AMPS)
20
16
12
8
4
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2.4 V
2.8 V
5V
4V
3.4 V
3V
I
D,
DRAIN CURRENT (AMPS)
T
J
= 25°C
24
20
16
12
8
4
0
0
T
J
= 25°C
T
J
=
−55°C
1
3
4
2
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
V
DS
≥
10 V
T
J
= 125°C
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.012
0.010
T
J
= 125°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.012
0.010
0.008
0.006
0.004
0.002
0
2
Figure 2. Transfer Characteristics
T
J
= 25°C
0.008
0.006
0.004
0.002
0
2
6
18
14
10
I
D,
DRAIN CURRENT (AMPS)
T
J
=
−55°C
V
GS
= 10 V
22
26
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
6
18
10
14
I
D,
DRAIN CURRENT (AMPS)
22
26
Figure 3. On−Resistance vs. Drain Current and
Temperature
2
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1000000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
= 13 A
V
GS
= 10 V
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
1.5
100000
T
J
= 150°C
1
10000
0.5
1000
T
J
= 125°C
0
−50
−25
0
25
50
75
100
125
150
100
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMS4700N
TYPICAL PERFORMANCE CURVES
C
iss
2500
C, CAPACITANCE (pF)
2000
1500
1000
500
0
10
V
DS
= 0 V
5
V
GS
0
V
DS
V
GS
= 0 V
5
10
15
20
T
J
= 25°C
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
3000
5
QT
4
3
2
1
0
Q
GS
Q
GD
V
GS
C
rss
C
iss
C
oss
C
rss
25
I
D
= 10 A
T
J
= 25°C
0
2
4
6
8
14
12
10
Q
G
, TOTAL GATE CHARGE (nC)
16
18
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
I
S
, SOURCE CURRENT (AMPS)
V
DD
= 15 V
I
D
= 10 A
V
GS
= 4.5 V
t
r
t
f
t
d(off)
t
d(on)
12
10
8
6
4
2
0
0
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
100
10
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.4
0.2
0.6
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
280
240
200
160
120
80
40
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 7.5 A
50
75
125
100
T
J
, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTMS4700N
PACKAGE DIMENSIONS
SO−8
CASE 751−07
ISSUE AG
−X−
A
8
5
B
1
S
4
0.25 (0.010)
M
Y
M
−Y−
G
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0
_
8
_
0.25
0.50
5.80
6.20
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0
_
8
_
0.010
0.020
0.228
0.244
C
−Z−
H
D
0.25 (0.010)
M
SEATING
PLANE
N
X 45
_
0.10 (0.004)
M
J
Z Y
S
X
S
DIM
A
B
C
D
G
H
J
K
M
N
S
SOLDERING FOOTPRINT*
1.52
0.060
STYLE 12:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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