NTMS4404N
Power MOSFET
Features
30 V, 12 A, Single N−Channel, SO−8
•
High Density Power MOSFET with Ultra Low R
DS(on)
for Higher
Efficiency
•
Miniature SO−8 Surface Mount Package Saving Board Space
•
I
DSS
Specified at Elevated Temperature
•
Diode Exhibits High Speed, Soft Recovery
Applications
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V
(BR)DSS
30 V
R
DS(on)
TYP
9.7 mW @ 10 V
15.5 mW @ 4.5 V
I
D
MAX
12 A
•
•
•
•
Power Management for Battery Power Products
Portable Products
Computers, Printers, PCMCIA Cards
Cell Phones, Cordless Telephones
N−Channel
D
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
tp
v10
s
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
P
D
I
D
P
D
I
DM
T
J
,
T
STG
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
30
$20
9.6
7.6
12
1.56
2.5
7.0
5.6
0.83
50
−55
to
150
6.0
500
W
A
°C
A
mJ
A
1
Unit
V
V
A
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
W
Source
Source
Source
Gate
1
E4404N
LYWW
8
Drain
Drain
Drain
Drain
Steady State
tp
v10
s
Steady
State
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
tp = 10
ms,
DC = 2 %
SO−8
CASE 751
STYLE 12
Top View
E4404N
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 20 V, V
GS
= 5 V, I
PK
= 7.25 A,
L = 19 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
ORDERING INFORMATION
Device
Package
SO−8
Shipping
†
2500/Tape & Reel
T
L
260
°C
NTMS4404NR2
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t = 1 0 s (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Symbol
R
qJA
R
qJA
R
qJA
Max
80
50
150
Unit
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad
size (Cu area = 0.412 in sq.)
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 2
1
Publication Order Number:
NTMS4404N/D
NTMS4404N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(ON)
tr
t
d(OFF)
t
f
t
d(ON)
tr
t
d(OFF)
t
f
V
SD
t
RR
t
a
tb
Q
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ms,
I
S
= 6.0
A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 24 V, I
D
= 6.0 A,
R
G
= 2.5
W
V
GS
= 10 V, V
DS
= 24 V, I
D
= 12 A,
R
G
= 2.5
W
V
GS
= 10 V, V
DS
= 24 V, I
D
= 12 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 24 V
V
GS
= 10 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 6.0 A
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
1975
575
180
50
2.4
7.5
16
2500
750
300
70
nC
pF
V
DS
= 15 V, I
D
= 12 A
V
GS
= 0 V, V
DS
= 30 V
T
J
= 25°C
T
J
= 100°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1.0
5.0
$100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Units
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
$20
V
V
GS
= V
DS
, I
D
= 250
mA
1.0
2.2
−5.0
9.7
15.5
17.5
3.0
V
mV/°C
11.5
17.5
mW
S
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
15
25
35
15
25
50
55
30
ns
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
20
80
25
15
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
(Note 4)
Forward Diode Voltage
V
GS
= 0 V, I
S
= 6.0 A
0.80
0.65
40
23
17
0.05
mC
55
ns
1.1
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
NOTES:
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMS4404N
TYPICAL PERFORMANCE CURVES
24
I
D,
DRAIN CURRENT (AMPS)
20
16
12
8
4
0
0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3.6 V
3.4 V
3.2 V
3.0 V
3.8 V
V
GS
= 10 V to 4.2 V
24
4V
I
D,
DRAIN CURRENT (AMPS)
T
J
= 25°C
20
16
12
8
4
0
2
T
J
= 25°C
V
DS
≥
10 V
T
J
= 100°C
T
J
=
−55°C
4
3
5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.05
I
D
= 12 A
T
J
= 25°C
0.025
Figure 2. Transfer Characteristics
T
J
= 25°C
0.04
0.02
V
GS
= 4.5 V
0.015
0.01
0.005
0
V
GS
= 10 V
0.03
0.02
0.01
0
2
5
7
8
9
4
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
10
6
8
10
12
14
16
18
20
22
24
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.2
1
0.8
0.6
−50
10
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
= 12 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
I
DSS
, LEAKAGE (A)
1000
100
T
J
= 100°C
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMS4404N
TYPICAL PERFORMANCE CURVES
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
5000
C, CAPACITANCE (pF)
V
DS
= 0 V
V
GS
= 0 V
15
QT
V
DS
30
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
4000 C
iss
3000 C
rss
2000
1000
0
C
iss
10
V
GS
5
Q
GS
Q
GD
I
D
= 12 A
T
J
= 25°C
0
0
30
10
20
40
Q
G
, TOTAL GATE CHARGE (nC)
20
10
C
oss
C
rss
10
5
V
GS
0
V
DS
5
10
15
20
25
30
0
50
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
12
I
S
, SOURCE CURRENT (AMPS)
V
DD
= 24 V
I
D
= 12 A
V
GS
= 10 V
t
d(off)
t
f
t
r
t
d(on)
10
10
8
6
4
2
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
100
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0
0.5
0.7
0.6
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.9
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
ID, DRAIN CURRENT (AMPS)
10 ms
1 ms
Figure 10. Diode Forward Voltage vs. Current
100
ms
10
dc
1
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
0.01
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTMS4404N
1000
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
DUTY CYCLE
100
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
(pk)
t
2
DUTY CYCLE, D = t
1
/t
2
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
t
1
10
1
SINGLE PULSE
0.1
1E−05
1E−04
R
θJA
(t) = r(t) R
θJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
A
= P
(pk)
R
θJA
(t)
1E+02
1E+03
1E+01
Figure 12. Thermal Response
−
Various Duty Cycles
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5
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