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NTB15N40

产品描述N−Channel Power MOSFET
产品类别分立半导体    晶体管   
文件大小153KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

NTB15N40概述

N−Channel Power MOSFET

NTB15N40规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
包装说明D2PAK-3
针数3
Reach Compliance Code_compli
ECCN代码EAR99
雪崩能效等级(Eas)675 mJ
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压400 V
最大漏极电流 (Abs) (ID)15 A
最大漏极电流 (ID)15 A
最大漏源导通电阻0.26 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PSSO-G2
JESD-609代码e0
元件数量1
端子数量2
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)202 W
最大脉冲漏极电流 (IDM)53 A
认证状态Not Qualified
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON

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NTP15N40, NTB15N40
Preferred Device
Advance Information
Power MOSFET
15 Amps, 400 Volts
N−Channel TO−220 and D
2
PAK
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
http://onsemi.com
Higher Current Rating
Lower R
DS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter V
SD
Specifications
Avalanche Energy Specified
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
15 AMPERES
400 VOLTS
R
DS(on)
= 260 mΩ
N−Channel
D
Typical Applications
G
4
S
1
Unit
Vdc
Vdc
Vdc
V
GS
V
GSM
I
D
I
D
"20
"40
Adc
Continuous
Continuous @ 100°C
Single Pulse (t
p
v10
μs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature
Range
Single Drain−to−Source Avalanche
Energy
Starting T
J
= 25°C
(V
DD
= 100 V, V
GS
= 10 Vdc,
I
L
= 15 A, L = 6 mH, R
G
= 25
Ω)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Junction−to−Ambient (Note 1.)
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from case
for 10 seconds
15
12
53
202
1.61
−55
to 150
675
Watts
W/°C
°C
mJ
Drain
NTP15N40
LLYWW
Gate
Source
Gate
Drain
Source
1
2
TO−220AB
CASE 221A
STYLE 5
3
2
3
D
2
PAK
CASE 418B
STYLE 2
4
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−Source Voltage
Drain−Gate Voltage (R
GS
= 1.0 MΩ)
Gate−Source Voltage
Continuous
Non−Repetitive (t
p
v10
ms)
Drain
Symbol
V
DSS
V
DGR
Value
400
400
MARKING DIAGRAMS
AND PIN ASSIGNMENTS
Drain
Drain
I
DM
P
D
T
J
, T
stg
E
AS
NTB15N40
LLYWW
NTx15N40
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
R
θJC
R
θJA
R
θJA
T
L
0.62
62.5
50
260
°C/W
ORDERING INFORMATION
Device
°C
NTP15N40
NTB15N40
NTB15N40T4
Package
TO−220AB
D
2
PAK
D
2
PAK
Shipping
50 Units/Rail
50 Units/Rail
800/Tape & Reel
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 2
1
Publication Order Number:
NTP15N40/D

NTB15N40相似产品对比

NTB15N40 NTB15N40T4 NTP15N40
描述 N−Channel Power MOSFET N−Channel Power MOSFET N−Channel Power MOSFET
是否Rohs认证 不符合 不符合 不符合
包装说明 D2PAK-3 D2PAK-3 FLANGE MOUNT, R-PSFM-T3
针数 3 3 3
Reach Compliance Code _compli _compli _compli
ECCN代码 EAR99 EAR99 EAR99
雪崩能效等级(Eas) 675 mJ 675 mJ 675 mJ
外壳连接 DRAIN DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 400 V 400 V 400 V
最大漏极电流 (Abs) (ID) 15 A 15 A 15 A
最大漏极电流 (ID) 15 A 15 A 15 A
最大漏源导通电阻 0.26 Ω 0.26 Ω 0.26 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3
JESD-609代码 e0 e0 e0
元件数量 1 1 1
端子数量 2 2 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 202 W 202 W 202 W
最大脉冲漏极电流 (IDM) 53 A 53 A 53 A
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON
厂商名称 ON Semiconductor(安森美) - ON Semiconductor(安森美)

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