NLAS3257
Mux / Demux Analog Switch
The NLAS3257 Mux / Demux Analog Switch is an advanced
high−speed single pole double throw (SPDT) analog switch in
ultra−small footprint.
Features
•
•
•
•
•
•
High Speed: t
PD
= 0.25 ns (Max) @ V
CC
= 4.5 V
R
ON
: 7.5
W,
Typ @ V
CC
= 4.2 V
C
ON
: 7.5 pF, Typ @ V
CC
= 3.3 V
V
CC
Range: 1.65 V to 4.5 V
Ultra−Small 1 x 1 mm Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
MARKING
DIAGRAM
XLLGA6
1.0 x 1.0
CASE 713AD
L
M
LM
Typical Applications
= Specific Device Code
= Date Code
•
Mobile Phones, PDAs, Camera
ORDERING INFORMATION
B1
GND
B0
1
2
3
6
5
4
S
V
CC
A
See detailed ordering and shipping information on page 6 of
this data sheet.
Figure 1. XLLGA6
(Top View)
A
B0
B1
S
Figure 2. Logic Diagram
Function Table
Input S
L
H
Function
A = B0
A = B1
©
Semiconductor Components Industries, LLC, 2015
1
December, 2015 − Rev. 1
Publication Order Number:
NLAS3257/D
NLAS3257
Table 1. MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
I/O
I
IK
I
OK
I
O
DC Supply Voltage
Control Input Voltage (S Pin)
Switch Input / Output Voltage (A, B0, B1 Pins)
Control Pin DC Input Diode Current (S Pin)
Switch I/O Port DC Diode Current (A, B0, B1 Pins)
On−State Switch Current
Continuous Current Through V
CC
or GND
I
CC
I
GND
T
STG
T
L
T
J
q
JA
P
D
MSL
F
R
V
ESD
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance (Note 1)
Power Dissipation in Still Air at 85°C (Note 1)
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Mode (Note 2)
Machine Mode (Note 3)
Charged Device Mode (Note 4)
XLLGA6
XLLGA6
V
IN
< GND
V
I/O
< GND or V
I/O
> V
CC
Parameter
Value
−0.5 to +5.5
−0.5 to +5.5
−0.5 to +5.5
−50
±50
±128
±150
±150
±150
−65 to +150
260
150
466
269
Level 1
UL 94 V−0 @ 0.125 in
>6000
>200
N/A
±100
V
Unit
V
V
V
mA
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 85°C (Note 5)
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA/ JESD22−A114−A
3. Tested to EIA/ JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA / JESD78.
Table 2. RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
I/O
T
A
Dt
/
DV
Positive DC Supply Voltage
Control Pin Input Voltage (S Pin)
Switch Input / Output Voltage (A, B0, B1 Pins)
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
Control Input
Switch I/O
Parameter
Min
1.65
0
0
−40
0
0
Max
4.5
4.5
V
CC
+85
20
DC
Unit
V
V
V
°C
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NLAS3257
Table 3. DC ELECTRICAL CHARACTERISTICS
(Typical: T = 25°C, V
CC
= 3.3 V)
T
A
= −405C to +855C
Symbol
V
IH
Parameter
Control Input, High Voltage
(S Pin)
Control Input, Low Voltage
(S Pin)
Control Input, Leakage
Current (S Pin)
Off State Leakage Current
(B0/B1 Pins)
On State Leakage Current
(A Pin)
0
≤
V
IN
≤
V
CC
V
IN
= V
IL
or V
IH
V
B0
and V
B1
= 0.3 V
V
A
= 4 V
V
IN
= V
IL
or V
IH
V
B0
= 0.3 V or 4 V with
V
B1
= Floating
or
V
B1
= 0.3 V or 4 V with
V
B0
= Floating
V
A
= 0.3 V or 4.0 V
V
IN
= 0 or 4.5 V
V
IN
= V
CC
or GND,
V
IS
= V
CC
or GND,
I
Load
= 0 A
V
IN
= V
CC
or GND,
V
IS
= V
CC
or GND,
I
Load
= 0 A
Test Conditions
V
CC
(V)
2.7
3.3
4.2
2.7
3.3
4.2
1.65 − 4.5
4.5
±0.5
±20
Min
0.8
1.0
1.25
0.3
0.4
0.5
±1.0
±100
Typ
Max
Unit
V
V
IL
V
I
IN
I
B0/B1_OFF
mA
nA
I
A_ON
4.5
±20
±100
nA
I
Power_OFF
I
CC
Power Off Leakage
Current (S Pin)
Quiescent Supply Current
(V
CC
Pin)
Additional Quiescent
Supply Current (V
CC
Pin)
0
1.65 − 4.5
0.1
±100
1.0
nA
mA
DI
CC
3.3
4.2
2.0
3.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. ON RESISTANCE
(Typical: T = 25°C)
T
A
= −405C to +855C
Symbol
R
ON
Parameter
ON−Resistance
Test Conditions
I
ON
= 8 mA,
V
IS
= 0 V to V
CC
I
ON
= 8 mA,
V
IS
= 0 V to V
CC
I
ON
= 8 mA,
V
IS
= 0 V to V
CC
V
CC
(V)
2.7
3.3
4.2
2.7
3.3
4.2
2.7
3.3
4.2
Min
Typ
9.3
8.7
7.5
3.6
3.3
2.9
0.8
0.7
0.5
Max
Unit
W
R
FLAT
ON−Resistance Flatness
W
DR
ON
Delta ON− Resistance
W
www.onsemi.com
3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
