NDUL09N150C
Power MOSFET
1500V, 3.0Ω, 9A, N-Channel
Features
Low On-Resistance
Ultra High Voltage
Pb-Free and RoHS Compliance
High Speed Switching
100% Avalanche Tested
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Electrical Connection
N-Channel
Specifications
Absolute Maximum Ratings
at Ta = 25C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (DC) Limited by Package
Drain Current (Pulse)
PW
10s, duty cycle
1%
Power Dissipation
Junction Temperature
Storage Temperature
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *
1
Lead Temperature for Soldering
Purposes, 3 mm from case for 10 seconds
Tc=25C
Symbol
VDSS
VGSS
ID
IDL
IDP
PD
Tj
Tstg
IS
EAS
TL
Value
1500
±30
9
6
18
3.0
78
150
55
to
+150
6
197
260
Unit
V
V
A
A
A
W
C
C
A
mJ
C
Marking
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *
2
Note : *
1
VDD=50V, L=10mH, IAV=6A (Fig.1)
*
2
Insertion mounted
Symbol
R
JC
R
JA
Value
1.60
41.7
Unit
C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
February 2015 - Rev. 1
1
Publication Order Number :
NDUL09N150C/D
NDUL09N150C
Electrical Characteristics
at Ta
½
25C
Value
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=6A, VGS=0V
See Fig.3
IS=6A, VGS=0V, di/dt=100A/s
VDS=200V, VGS=10V, ID=6A
See Fig.2
500
111
114
12
57
0.8
1050
9010
1.5
ns
ns
nC
nC
nC
V
ns
nC
VDS=30V, f=1MHz
Conditions
min
ID=10mA, VGS=0V
VDS=1200V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=3A
ID=3A, VGS=10V
2
5.2
2.2
2025
222
66
33
75
3.0
1500
1
100
4
typ
max
V
mA
nA
V
S
pF
pF
pF
ns
ns
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 : Unclamped Inductive Switching
Test Circuit
Fig.2 : Switching Time Test Circuit
Fig.3 : Reverse Recovery Time Test Circuit
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2
NDUL09N150C
Package Dimensions
NDUL09N150CG
unit : mm
TO-3PF-3L
CASE 340AH
ISSUE A
SEATING
PLANE
E
P
Q
A
A1
H1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES).
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20.
DIM
A
A1
A2
A3
b
b2
b3
c
D
D2
D3
E
e
H1
L
L1
L2
P
Q
MILLIMETERS
MIN
MAX
5.30
5.70
2.80
3.20
3.10
3.50
1.80
2.20
0.65
0.95
1.90
2.15
3.80
4.20
0.80
1.10
24.30
24.70
24.70
25.30
3.30
3.70
15.30
15.70
5.35
5.55
9.80
10.20
19.10
19.50
4.80
5.20
1.90
2.20
3.40
3.80
4.30
4.70
D
D2
L2
L1
D3
L
NOTE 3
1
3X
2
3
3X
1 : Gate
2 : Drain
3 : Source
b
c
A3
A2
b2
b3
e
ORDERING INFORMATION
Device
NDUL09N150CG
Package
TO-3PF-3L
SC-94
Shipping
30pcs. / Tube
Note
Pb-Free
Note on usage : Since the NDUL09N150C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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