SIDC16D60SIC3
Silicon Carbide Schottky Diode
FEATURES:
•
Worlds first 600V Schottky diode
•
Revolutionary semiconductor material -
Silicon Carbide
•
Switching behavior benchmark
•
No reverse recovery
•
No temperature influence on the switching
behavior
•
Ideal diode for Power Factor Correction
•
No forward recovery
Applications:
•
SMPS, PFC, snubber
A
C
Chip Type
SIDC16D60SIC3
V
BR
600V
I
F
5A
Die Size
1.26 x 1.26 mm
2
Package
sawn on foil
Ordering Code
Q67050-A4271-
A101
MECHANICAL PARAMETER:
Raster size
Anode pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metalization
Cathode metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1.26 x 1.26
mm
0.960 x 0.960
1.588 / 0.96
355
75
0
2457 pcs
Photoimide
3200 nm Al
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al,
≤
125µm
∅ ≥
0.2 mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
mm
µm
mm
deg
2
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.01.2004
SIDC16D60SIC3
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
Continuous forward current limited by
T
jmax
Single pulse forward current
(depending on wire bond configuration)
Symbol
V
RRM
V
RSM
I
F
I
FSM
I
FRM
I
FMAX
T
j
,
T
s t g
Condition
Value
600
600
5
Unit
V
T
C
=25° C, t
P
=10 ms sinusoidal
T
C
= 100° C, T
j
= 1 5 0
°
C,
D=0.1
T
C
=25° C, tp=10µs
18.5
21
50
-55...+175
A
Maximum repetitive forward current
limited by T
jmax
Non repetitive peak forward current
Operating junction and storage
temperature
°C
Static Electrical Characteristics
(tested on chip),
T
j=25
°C,
unless otherwise specified
Parameter
Reverse leakage current
Forward voltage drop
Symbol
I
R
V
F
Conditions
V
R
= 6 0 0 V *
I
F
= 5A
T
j
= 2 5
°
C
T
j
= 2 5
°
C
Value
min.
Typ.
19
1.5
max.
200
1.7
Unit
µA
V
* blocking characteristic measured under protective gas atmosphere. Chip should not be used without being
embedded in pottant with breakdown field strength lower than 9 KV/mm at full blocking voltage.
Dynamic Electrical Characteristics
,
at
T
j
= 25
°C,
unless otherwise specified, tested at component
Parameter
Total capacitive charge
Symbol
Q
C
I
F
= 5A
di / d t = 2 0 0 A /
µs
V
R
=400V
Conditions
Value
min.
Typ.
14
max.
Unit
T
j
= 150 °C
nC
Switching time
t
rr
I
F
= 5A
di/dt=200A/µs
V
R
= 4 0 0 V
T
j
= 150 °C
n.a.
ns
Total capacitance
C
I
F
= 5A
di/dt=200A/µs
T
j
=25°C
f=1MHz
V
R
=1V
V
R
=300V
V
R
=600V
170
16
12
pF
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.01.2004
SIDC16D60SIC3
CHIP DRAWING:
960
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.01.2004
1260
6
R5
SIDC16D60SIC3
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES
SDT05S60
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.01.2004
ADI 工业技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
