<£e.mi-(landuai
oi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MRF207, MRF208, MRF209
(
S.L>CON)
The RF Line
NPN SILICON RF POWER TRANSISTORS
. . . designed for 12.5 Volt large-signal power amplifier applications
in communications equipment operating at 220 MHz.
• Specified 1 2.5 Volt, 220 MHz Characteristics -
Output Power = 1.0 W - MRF207
10W-MRF208
25 W - MRF209
Minimum Gain = 8.2 dB — MRF207
10dB-MRF208
4.4dB-MRF209
• Balanced-Emitter Construction to provide the designer with the de-
vice technology that assures ruggedness and resists transistor
damage caused by load mismatch.
1.0, 10, 25 WATTS - 220 MHz
NPN SILICON
RF POWER
TRANSISTORS
MRF207
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Bata Voltage
Emitter-Bate Voltage
Collector Current -Continuous
Total Device Dissipation ®T
C
-25
0
CH>
Derate above 25° C
Storage Temperature Rang*
Stud Torque' 'I
Symbol MRF207 MRF208J MRF209
—
18 •• •
•
VCEO " '
VCBO
^EBO
<c
P
D
T
sw
*
'
04
3.5
20
36
4.0
2.0
4.0
.
Unit
Vdc
Vdc
Vdc
Adc
37.5
50
214
286
-65 to +2OO
6.S
Watts
mvW°C
°C
in. Ib.
ID These devices are designed for RF operation. Tha total device
dissipation rating applies only when the devices are operated as
RF amplifier!.
{2) For Repeated Assembly use 5 in. Ib.
MRF208
MRF209
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished bv N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
VI Semi-Conductors encourages customers to verity that datasheets lire current before placing orders.
MRF207, MRF208, MRF209
(continued)
ELECTRICAL CHARACTERISTICS
(T
c
= 2S°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(l
c
= 50 mAdc, I
B
= 01
(1C = 15 mAdc, I
B
= 0)
(I
C
= 20 mAdc, IB "01
Collector-Base Breakdown Voltage
(1C =2.0 mAdc. IE = 01
(1C =5.0 mAdc. IE = 0)
(1C - 10 mAdc. IE =0)
Emitter-Base Breakdown Voltage
(I
E
= I.OmAdc. lc = 01
(I
E
=2.5 mAdc. l
c
=01
(IE = 5.0 mAdc. lc = 0)
Collector Cutoff Current
(Vce = 15 Vdc, IE = 0)
BVcEO
MRF207
MRF208
MRF209
BV
CBO
MRF207
MRF208
MRF209
BVEBO
MRF207
MRF208
MHF209
4O
4.0
4.0
36
36
36
-
-
-
_
-
-
-
-
-
Symbol
Typ
|
Unit
[
18
18
18
-
-
-
_
-
-
Vdc
Vdc
-
-
-
Vdc
-
-
-
ICBO
MRF207
mAdc
„
-
-
01
MR F 208
MRF209
ON CHARACTERISTICS
DC Current Gain
lie - 100 mAdc, VCE = 5.0 Vdc)
( l
c
» 250 mAdc. V
CE
=5.0 Vdc)
dC - 500 mAdc. VCE = 5.0 Vdcl
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain
<Vcc
=
'25 Vdc. P
out
= LOW. ( = 220 MHz)
(V
C
c = U5 Vdc. P
ou
, = 10 W. f- 220MHz)
(V
CC
• 12.5 Vdc. P
out
= 25 W . f -220MHz)
Input Impedance
(P
ou
, = 1.0 W.f - 220MHz)
|p
out
=
10W. f - 220MHz)
(P
out
= 25 W.f > 220MHz)
Output Impedance
<
p
out • 1 0 W . f
"
220MHz)
l
p
out = 10 W . f - 220 MHz)
(
p
out " 25 W . f = 220MHzl
"FE
025
0.5
MRF207
MRF208
MRF209
5.0
5.0
5.0
-
-
CPE
MRF207
MRF208
MR F 209
Zin
8.2
10
4.4
-
-
-
12.5
12.5
dB
-
-
-
5.2
Ohms
10-J11.5
1.4t,1.4
-
-
-
MRF207
MRF208
MRF209
^out
MRF207
MRF208
MRF209
1
.4+j
1 .8
32- J41
57 -ji.3
3.9-J0.2
Ohms
-
-
-
-
~
-
220 MHz TEST CIRCUIT
FIGURE 1 - M R F 2 0 7
FIGURE 2 - MRF208. MRF209
C1
C2. C4
C3
C5
C6
C7
L1
L2
L3. L4
20 50 pF ARCO 461
5.0 SO
pf
ARCO 462
1 5 15 pF ARCO 460
40
C
F
1000 pF
5.0MF
TANTALUM
1 Turn. #20 A W G . 1/4" ID
4 Turns. *20 AWG. 1/4 ID
15 MH RFC
C 1 . C 2 . C 3 . C 4 5 0 • 80 pF AH CO .162
C5. C6
lOOpF
C7
10MF
TANTALUM
C8
1000 pF
L1
#14 A W G , 1 %" LOnfl. Straight
L2
1 Turn. #14 AWG. 3/8" ID
L3. L4
RFC UK200
嵌入式系统
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