MMDF2C02HD
Preferred Device
Power MOSFET
2 Amps, 20 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
•
Ultra Low R
DS(on)
Provides Higher Efficiency and Extends
Battery Life
•
Logic Level Gate Drive
−
Can Be Driven by Logic ICs
•
Miniature SO−8 Surface Mount Package
−
Saves Board Space
•
Diode Is Characterized for Use In Bridge Circuits
•
Diode Exhibits High Speed, With Soft Recovery
•
Avalanche Energy Specified
•
Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted) (Note 1.)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 1.0 mΩ)
Drain Current
−
Continuous
−
Pulsed
N−Channel
P−Channel
N−Channel
P−Channel
Symbol
V
DSS
V
GS
V
DGR
I
D
I
DM
T
J
, T
stg
P
D
E
AS
405
324
R
θJA
T
L
62.5
260
°C/W
°C
Value
20
±
20
20
3.8
3.3
19
20
−
55
to 150
2.0
Unit
Vdc
Vdc
Vdc
A
8
1
D2C02
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
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2 AMPERES
20 VOLTS
R
DS(on)
= 90 mW (N−Channel)
R
DS(on)
= 160 mW (P−Channel)
N−Channel
D
P−Channel
D
G
S
G
S
MARKING
DIAGRAM
SO−8, Dual
CASE 751
STYLE 14
D2C02
LYWW
Operating and Storage Temperature Range
Total Power Dissipation @ T
A
= 25°C (Note 2.)
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 20 V, V
GS
= 5.0 V, Peak I
L
= 9.0 A,
L = 10 mH, R
G
= 25
Ω)
N−Channel
(V
DD
= 20 V, V
GS
= 5.0 V, Peak I
L
= 6.0 A,
L = 18 mH, R
G
= 25
Ω)
P−Channel
Thermal Resistance
−
Junction to Ambient
(Note 2.)
Maximum Lead Temperature for Soldering,
0.0625″ from case. Time in Solder Bath is
10 seconds.
°C
Watts
mJ
PIN ASSIGNMENT
N−Source
N−Gate
P−Source
P−Gate
1
2
3
4
8
7
6
5
N−Drain
N−Drain
P−Drain
P−Drain
Top View
ORDERING INFORMATION
Device
MMDF2C02HDR2
Package
SO−8
Shipping
2500 Tape & Reel
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 7
1
Publication Order Number:
MMDF2C02HD/D
MMDF2C02HD
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Note 1)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
Gate−Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μAdc)
Drain−to−Source On−Resistance
(V
GS
= 4.5 Vdc, I
D
= 1.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 1.0 Adc)
Drain−to−Source On−Resistance
(V
GS
= 10 Vdc, I
D
= 3.0 Adc)
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
Forward Transconductance
(V
DS
= 3.0 Vdc, I
D
= 1.5 Adc)
(V
DS
= 3.0 Vdc, I
D
= 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V
DD
= 10 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc,
R
G
= 6.0
Ω)
(V
DD
= 10 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc,
R
G
= 6.0
Ω)
(V
DD
= 10 Vdc, I
D
= 3.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0
Ω)
(V
DD
= 10 Vdc, I
D
= 2.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0
Ω)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
11
19
58
66
17
25
20
37
7.0
11
32
21
27
45
21
36
22
38
116
132
35
50
40
74
21
22
64
42
54
90
42
72
ns
(V
DS
= 16 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
(N)
(P)
(N)
(P)
(N)
(P)
−
−
−
−
−
−
455
420
184
290
45
116
630
588
250
406
90
232
pF
V
GS(th)
R
DS(on)
Vdc
−
(N)
(P)
(N)
(P)
(N)
(P)
1.0
−
−
−
−
2.0
2.0
1.5
0.074
0.152
0.058
0.118
3.88
3.0
2.0
Ohm
0.100
0.180
Ohm
0.090
0.160
mhos
−
−
V
(BR)DSS
I
DSS
I
GSS
Vdc
−
(N)
(P)
−
20
−
−
−
−
−
−
−
−
1.0
1.0
100
μAdc
nAdc
Symbol
Polarity
Min
Typ
Max
Unit
R
DS(on)
g
FS
1. Negative signs for P−Channel device omitted for clarity.
2. Pulse Test: Pulse Width
≤
300
μs,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperature.
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2
MMDF2C02HD
ELECTRICAL CHARACTERISTICS
−
continued
(T
A
= 25°C unless otherwise noted) (Note 4)
Characteristic
SWITCHING CHARACTERISTICS
−
continued
(Note 6)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(V
DS
= 16 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc)
(V
DS
= 16 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc)
Q
T
Q
1
Q
2
Q
3
SOURCE−DRAIN DIODE CHARACTERISTICS
(T
C
= 25°C)
Forward Voltage (Note 5)
Reverse Recovery Time
(I
S
= 3.0 Adc, V
AS
= 0 Vdc,
dI
S
/dt = 100 A/μs)
(I
S
= 2.0 Adc, V
AS
= 0 Vdc,
dI
S
/dt = 100 A/μs)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc)
V
SD
t
rr
t
a
t
b
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
−
−
−
−
−
−
−
−
−
−
0.79
1.5
23
38
18
17
5.0
21
0.025
0.034
1.3
2.1
−
−
−
−
−
−
−
−
μC
Vdc
ns
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
−
−
−
−
−
−
−
−
12.5
15
1.3
1.2
2.8
5.0
2.4
4.0
18
20
−
−
−
−
−
−
nC
Symbol
Polarity
Min
Typ
Max
Unit
Reverse Recovery Stored
Q
RR
Charge
4. Negative signs for P−Channel device omitted for clarity.
5. Pulse Test: Pulse Width
≤
300
μs,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperature.
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3
MMDF2C02HD
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
6
I D , DRAIN CURRENT (AMPS)
5
4
3.1 V
3
2.9 V
2
2.7 V
1
2.5 V
0
0
0.2
1.6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
0.6
0.8
1
1.2
1.4
1.8
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
= 10 V
4.5 V
3.9 V
3.5 V
3.7 V
3.3 V
T
J
= 25°C
I D , DRAIN CURRENT (AMPS)
4
V
GS
= 10 V 4.5 V
P−Channel
3.9 V
3.7 V
3.5 V
T
J
= 25°C
3
3.3 V
2
3.1 V
1
2.9 V
2.7 V
2.5 V
1.4
1.6
1.8
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 1. On−Region Characteristics
6
V
DS
≥
10 V
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
4
V
DS
≥
10 V
3
4
T
J
= 100°C
25°C
2
− 55°C
2
1
100°C
25°C
T
J
= − 55°C
1.5
2.0
2.5
3.0
3.5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
1
1.4
1.8
2.2
2.6
3
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3.4
0
1.0
Figure 2. Transfer Characteristics
Figure 2. Transfer Characteristics
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4
MMDF2C02HD
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
I
D
= 1.5 A
T
J
= 25°C
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0.6
0.6
I
D
= 1 A
T
J
= 25°C
P−Channel
0.4
0.4
0.2
0.2
0
0
1
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
9
10
0
0
2
4
6
8
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0.08
T
J
= 25°C
V
GS
= 4.5 V
0.20
T
J
= 25°C
0.16
Figure 3. On−Resistance versus
Gate−To−Source Voltage
V
GS
= 4.5 V
0.07
0.12
10 V
0.06
10 V
0.08
0.05
0.04
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
D
, DRAIN CURRENT (AMPS)
0
1
2
3
4
I
D
, DRAIN CURRENT (AMPS)
5
6
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
V
GS
= 10 V
I
D
= 1.5 A
1.6
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 10 V
I
D
= 2 A
1.4
1.4
1.2
1.2
1
1.0
0.8
0.8
0.6
−50
−25
0
25
50
75
100
125
150
0.6
−50
− 25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 5. On−Resistance Variation with
Temperature
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