Plastic-Encapsulate Transistors
FEATURES
Complementary to MMBT5551
Ideal for medium power amplification and switching
MMBT5401
(PNP)
MARKING
:
2L
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-160
-150
-5
-0.6
0.3
150
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Collector Power Dissipation
Junction Temperature
Storage Temperature
P
C
T
J
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
VCBO
VCEO
VEBO
ICB
O
IEB
O
hFE1
Test
conditions
IE=0
IB=0
Min
-160
-150
-5
Max
Unit
V
V
V
IC= -100μA,
IC= -1mA,
IE= -10μA, IC=0
VCB=-120 V ,
VEB=-4V ,
VCE= -5V,
VCE= -5V,
VCE= -5V,
IC=-50 mA,
IC= -50 mA,
-5mA
VCE= -5V,
-10mA
f=30MHz
IC=0
IC= -1mA
IC=-10mA
IC=-50mA
IB= -5mA
IB=
IC=
IE=0
-0.1
-0.1
80
100
50
-0.5
-1
100
300
μA
μA
DC current gain
hFE2
hFE3
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
MHz
MAKO Semiconductor Co., Limited
4008-378-873
http://www.makosemi.hk/
Page:P2-P1
Plastic-Encapsulate Transistors
MMBT5401
Typical
Characteristics
GUANGDONG HOTTECH
MAKO Semiconductor Co., Limited
INDUSTRIAL CO,. LTD.
http://www.makosemi.hk/
Page:P2-P2
4008-378-873