20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
COMPLEMENTARY SILICON POWER TRANSISTORS
...designed for use in general-purpose amplifier and switching
applications
FEATURES:
* Power Dissipation - P
D
= 75 W © T
c
= 25°C
* DC Current Gain hFE = 20 - 100 © l
c
= 4.0 A
*
v
CE(isrt) =
1
-1 V (Max.) © l
c
= 4.0 A, I
B
= 400 mA
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP
NPN
MJE2955T MJE3055T
MAXIMUM RATINGS
10AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS
75 WATTS
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total, Power Dissipation @T
C
=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
Rating
60
70
5.0
10
6.0
75
0.6
Unit
V
V
V
A
'c
IB
PD
T
J >
T
STO
TO-220
A
W
W/°C
°C
I
' » I
-55
to
+150
HW
THERMAL CHARACTERISTICS
-44
Characteristic
Thermal Resistance Junction to Case
Symbol
Rejc
Max
1.67
Unit
°c/w
PIN1.BASE
2.COLLECTOR
S.BmTER
4.COLLECTOR(CASe)
MILLIMETERS
FIGURE -1 POWER DERATING
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
O
MIN
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.7D
MAX
15.31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.96
1.38
2.97
0.55
2.98
3.90
25
50
75
100
125
150
T
c
, TEMPERATURECC)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJE2955T PNP / MJE305ST NPN
ELECTRICAL CHARACTERISTICS ( T
c
= 25'C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( l
c
= 200 mA, I
B
= 0 )
Collector Cutoff Current
(V
CE
= 30V,I
B
= 0)
Collector Cutoff Current
(V
cs
= 70V,V
M(ofl)
=1.5V)
( Vce = 70V, VB^ = 1.5 V ,T
C
<*
150°C )
Collector Cutoff Current
(V
CB
= 70V, l
e
= 0)
(V
CB
= 70V,I
E
= 0
I
T
C
= 150°C)
Emitter Cutoff Current
(V
6B
= 5.0V,I
C
*0 )
ON CHARACTERISTICS (1)
DC Current Gain
(IC-^OA.VC^.OV)
(le-10A.Vc5-4.OV)
Collector - Emitter Saturation Voltage
(I
C
= 4.0A,I
B
-0.4A)
(I
C
-10AJ
B
= 3.3A)
Base - Emitter On Voltage
(l
c
=4.0A,V
ce
= 4.0V)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
( l
c
= 500 mA , ^ = 1 0 V ,f = 500 KHz )
(1) PulM TMt Puts* width • 300 us, Duty Cycle £ 2.0%
'T
MHz
2.0
hFE
20
Symbol
Min
Max
Unit
VCBXSUS)
'CEO
'CEX
V
60
mA
0.7
mA
1.0
5.0
'CBO
mA
1.0
10
IEBO
mA
5.0
100
5.0
V
CE(«t)
V
1.1
8.0
*BE|on)
V
1.8
嵌入式系统
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