<z$E.ml-Concluctoi ZPioauch, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
... designed for low power amplifier and low current, high speed switchii
applications.
FEATURES:
* Collector-Emitter Sustaining VoHage-
40 V (Min) - MJE170.MJE180
= 60 V (Min) - MJE171.MJE181
= 80 V (Min) - MJE172.MJE182
* DC Current Gain-
hFE=30(Min)© I
C
= 0.5A
=12(Min)ei
c
»1.5A
MAXIMUM RATINGS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP
MJE170
MJE171
MJE172
NPN
MJE180
MJE181
MJE182
3.0 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40-80 Volts
12.5 Watts
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
-Peak
Base Current
Total Power Dissipation@T
c
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
MJE17C MJE171 MJE172
MJE180
VCEO
VCBO
VEBO
MJE181
MJE182
80
100
Unit
V
V
V
40
60
60
80
7.0
TO-220
Ic
'B
PD
3.0
6.0
1.0
A
A
.
I—i^o Hr
_
r[
,4.
B
j
12.5
0.10
-65 to +150
W
W/°C
T
J '
T
STO
°c
nJ
Symbol
R9jc
Max
Unit
°C/W
10
PIN 1.BASE
2 COLLECTOR
3.EMnTER
4,COLLECTOR(CASe)
DIM
MILLIMETERS
MIN
MAX
FIGURE -1 POWER DERATING
A
B
C
D
E
F
G
H
I
J
K
25
50
75
100
125
150
L
M
0
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
033
2.48
370
T
c
, TEMPERATURE('C)
15.31
10.42
6.S2
14.62
4.07
3.66
1.36
0.96
4,98
1.38
2,97
0.55
2.98
3,90
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJE170, MJE171, MJE172 PNP / MJE180, MJE181, MJE182 NPN
ELECTRICAL CHARACTERISTICS (
T
c
» 25°C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
(l
c
= 10mA,l
B
= 0)
MJE170.MJE180
MJE171.MJE181
MJE172.MJE182
MJE170.MJE180
MJE171.MJE181
MJE172.MJE182
MJE1 70.MJE1 80
MJE171.MJE181
MJE1 72.MJE1 82
Versus,
V
Symbol
Min
Max
Unit
40
60
80
uA
Collector Cutoff Current
(V
ci
= 60V, l, = 0)
(V
ci
= 80V, l
e
= 0)
(V
CK
=100V, l. = 0)
( V
es
= 60 V, l
s
= 0, T
c
= 1 50"C )
( V
CB
= 80 V, IB = 0, T
c
= 150°C )
( V
CI
= 1 00 V, I
B
= 0, T
c
= 1 50°C )
Emitter Cutoff Current
( VEB = 7.0 V , l
c
= 0 )
ON CHARACTERISTICS (1)
DC Current Gain
( l
c
= 100 mA,V
CI
= 1.0V)
( l
c
= 500 mA,V
CI
* 1.0V)
(I
C
= 1.5A,V
CE
*1.0V)
Collector-Emitter Saturation Voltage
( l
c
= 500 mA, I
B
= 50 mA )
(l
c
=1.5A,l
B
= 150mA)
(l
c
= 3.0A,l
B
= 600mA)
Base-Emitter Saturation Voltage
(l
c
- 1.5 A. I
B
" 150m A)
( l
c
= 3.0 A, I
B
= 600 m A )
Base-Emitter On Voltage
( l
c
= 500 mA,V
C6
= 1.0V)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
( l
c
= 100 mA, VCE = 10 V, f = 10 MHz)
Output Capacitance
( V
CB
= 10 V, I
E
= 0, f = 0.1 MHz )
'CBO
10
10
10
100
100
100
uA
10
IIBO
hFE
50
30
12
250
V«M
V
0.3
0.9
1.7
V
V
M
1.5
2.0
V
1.2
V
8E(on)
f
T
MHz
50
PF
60
50
MJE1707MJE172
MJE180/MJE182
Cob
(1) Pulse Test Pulse width = 300 us , Duty Cycle £ 2.0%
(2)f
T
= K.I -f^.
FPGA/CPLD
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