, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
U.SA
MJE13007
SILICON NPN SWITCHING TRANSISTOR
. SGS-THOMSON PREFERRED SALESTYPE
. NPN TRANSISTOR
. HIGH CURRENT CAPABILITY
APPLICATIONS
. SWITCHING REGULATORS
. MOTOR CONTROL
DESCRIPTION
The MJE13007 is a silicon multiepitaxial mesa
NPN power transistor mounted in Jedec TO-220
plastic package.
It is are inteded for use in motor control, switching
regulators etc.
TO-220
INTERNAL SCHEMATIC DIAGRAM
Co (2)
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
Ic
ICM
IB
IBM
IE
IEM
Plot
Tstg
Tj.
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (Ic = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Emitter Current
Emitter Peak Current
Total Dissipation at T
c
< 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
Unit
V
V
9
8
16
V
A
A
4
8
12
24
80
A
A
A
A
W
-65 to 150
150
°c
' °c
"
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ .Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Ounlitv
MJE13007
THERMAL DATA
R|hj-ca se
Thermal Resistance Junction-case
Max
1,56
°C/W
ELECTRICAL CHARACTERISTICS
(T
ca
se = 25 °C unless otherwise specified)
Symbol
ICEV
IEBO
Parameter
Collector Cut-off
Current (V
B
E = -1.5V)
Test Conditions
VCE = rated VCFV
VCE = rated VCEV
T
C
= 100°C
Min.
Typ.
Max.
1
5
1
400
Unit
mA
mA
mA
V
Emitter Cut-off Current VEB = 9 V
(Ic = 0)
VCEO(SUS)* Collector-Emitter
Ic - 10 mA
Sustaining Voltage
VcEjsatr Collector-Emitter
Ic = 2 A
Saturation Voltage
Ic = 5 A
|
c
= 8 A
l
c
= 5 A
VBEisatr
Base-Emitter
Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Ic = 2 A
Ic = 5 A
Ic = 5 A
l
c
= 2 A
Ic = 5 A
lc = 0.5 A
IE = 0
IB = 0.4 A
IB = 1 A
IB = 2 A
IB = 1 A
IB = 0.4 A
IB = 1 A
IB = 1 A
VCE = 5 V
VCE = 5 V
VCE = 10 V
VCB = 10 V
T
c
= 100 "C
1
1.5
3
2
1.2
1.6
1.5
8
6
40
30
V
V
V
V
V
V
V
T
c
= 100 °C
hFE*
ft
CCBO
f = 1 MHz
f = 0.1 MHz
4
MHz
110
PF
RESISTIVE LOAD
Symbol
ton
ts
Parameter
Turn-on Time
Storage Time
Fall Time
Test Conditions
V
cc
= 125 V l
c
= 5 A
IBI - -lB2 - 1 A
t
p
~ 25 us Duty Cycle < 1%
Min.
Typ.
Max.
0.7
3
0.7
Unit
.us
ms
ms
tf
INDUCTIVE LOAD
Symbol
t
(
t
f
Parameter
Fall Time
Fall Time
Test Conditions
Vcc = 125 V
t
p
= 25 us Duty
V
cc
= 125 V
t
p
= 25 jjs Duty
T
c
= 100 °C
l
c
= 5
Cycle
l
c
= 5
Cycle
A
IBI = 1 A
< 1%
A
IBI = 1 A
< 1%
Min.
Typ.
Max.
0.3
0.6
Unit
MS
US
' Pulsed: Pulse duration = 300 us, duty cycle 2 %
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