cSemi-Conaucioi ^Pioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
usA
MJE1090 .hn, MJE1093 PNP <SIUCON>
MJE2090ri,n,MJE2093
MJE1100>h
ro
MJE1103NPN
MJE2100*,uMJE2103
PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
Designed for use in driver and output stages in complementary
audio amplifier applications.
MJE1090
MJE1091
MJE1092
MJE1093
MJE1100
MJE1101
MJE1102
MJE11O3
5.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
60-80 VOLTS
70 WATTS
•
High DC Current Gain -
hpE = 750 (Mini @ IQ * 3.0 and 4 0 Adc
True Three Lead Monolithic Construction - Emitter-Base Resistors
to Prevent Leakage Multiplication are Built in.
Available in Two Packages — Case 90 or Case 199
•
•
MAXIMUM RATINGS
MJE10M
MJE1091
MJE1100
MJE1101
MJE2OBO
MJE2091
MJE2100
MJE2101
60
60
|
50
50
0,1
70
056
-55 t o * 150
MJE1092
MJE10B3
MJE11O2
MJE11O3
MJE20S2
MJE2OB3
MJE2102
MJE2103
BO
80
Rating
Symbol
Unit
CASE 90-05
Vdc
Vdc
Vdc
Adc
Adc
Watt!
W/°C
°C
MJE20SO
MJE20S1
MJE20SJ
MJ62093
MJE2100.
MUE2101
MJE2102
MJEJ103
Collector-Emitter Voltage
Collector-Bate Voltage
Emitter-Bate Voltage
Collector Current
Beie Current
Total Device Dunpation
9
TC • 25°C
Derate above 2S°C
Operating end Storage Junction
Temperatmg Range
THERMAL CHARACTERISTICS
CharMUriltic
Thermal Rniitince. Junction to C»M
VCEO
VCB
VEB
'c
I
B
>
0
T
J.
T,,,
Symbol
»JC
Mai
1.8
Unit
°c/w
FIGURE 1 - POWER DERATING
S
Pp. POWER DISSIPATION WATTS)
X
S
S
\
S
-
N
N
>
X
N
120
CASE 199-04
S
Kg
S
20
«l>
60
80
100
140
N
=
IN
TC. CA5f TEMPERATURE (°C)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use,
NJ Semi-Conductors encourages customers to verity that datasheets nre current before placing orders.
Quality Semi-Conductors
MJE1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued)
MJE2090thru MJE2093 PNP/MJE2100 thru MJE2103 NPN
ELECTRICAL CHARACTERISTICS
IT
C
' 35°C unim oth«w» noted)
ChtracwMIe
Off
CHARACTERISTICS
Colkctor-Erninv Brwkdown Volu«t«l
(l
c
- 100 mAdc, I
B
-01
MJE1090, MJE1091, MJE1100. MJE1101
MJE2090, MJE2091, MJE 2100. MJE2101
MJE1092, MJE1093, MJ61102. MJE1103
MJE2092, MJE2093, MJE2102, MJE2103
ColtKtOr Cutoff Current
IV
Ce
-30V<fc. I
B
' 0)
MJE 1090, MJE1091.MJE 1100, MJE1101
MJE2090, MJE2091, MJE2100, MJB2101
I Symbol
BV
CE
0
Min
Mix
]
Unit
|
Vdc
60
60
80
60
-
-
-
:
uAdc
'CEO
(VCE -40 Vdc, i
B
- ov
MJE 1093, MJE 1093. MJE 1102, WUEIIOS
MJE 2092, MJE2093. MJ62102. MJE2103
5OO
500
500
500
rnAdc
Coll*cwr Cutoff Currant
(V
CB
- R*Ud BVCEQ. >E ' 0'
<V£p - Rlttd BVnEO, l£ " 0, T
C
- IOO°C)
Emitt«r Cutoff Currant
(V
8E
- 6.0 Vdc, I
C
- 01
ON CHARACTERISTICS HI
ICBO
-
0.2
2.0
>6BO
—
2.0
mAdc
DC Current Giin
(1C - 3.0 Adc. VCE "3.0 Vdc)
(1C - 4.0 Adc, V
CE
- 3.0 Vdc)
CollKtor-Emitttr Saturation Voltag*
IIC -3.0 Adc, IB - 12 mAdc)
(1C- 4.0 Adc, I
B
" 16 mAdc)
BiM-Emitur On Valtagt
((
c
• 3.0 Adc, V
CE
-S.OVdcl
dC - 4.0 Adc. VCE ' 3.0 Vdc)
MJE 1090, MJE 1O92, MJE 1100. MJE 1102
MJE 2090, MJE2092, MJE2100. MJE2102
MJE1091. MJE 1093, MJE1101, MJE 1103
MJE2091. MJE S093, MJE210V MJE 2 103
hFE
|_
750
'50
750
750
-
-
-
-
I
-
Vdc
MJE 1090. MJE 1092, MJE 1100, MJE 1102
MJE2090, MJE 2092. MJE2100, MJE2102
MJE 1091, MJE 1093, MJE 1101, MJE 1103
VUE2091. MJP2093. MJE2101. MJEJJffi) ^
MJE 1090, MJE 1092, MJE 1)00, MJE 1102
MJE2090. MJE2092. MJE2100. MJE2102
MJE1091. MJEI093. MJE 1 101, MJE 1 103
MJE2091, MJE2093. MJE2101, MJE2103
V
CEI»I)
2.5
._ _2,5
2.8
2.8
Vdc
v
BE(on)
_
2.5
2.5
2.B
2.5
DYNAMIC CHARACTERISTICS
Snull-Signd Currtnt Gain
dC - 3.0 Adc. VCE - 3.0 Vdc, f - 1 .0 MHz)
<"puli« T.,i Pull. Width < 300
ia.
Duty Cycl* < 20%
h
f.
1.0
-
-
FIGURE 2 - DC SAFE OPERATING AREA
'• 1
::i==:
T
V
x
-
Hnitfd
_1'.^_
»c«idi
ur>
tak
dOM
bMflta
ly L miw
O U T
t
andirv
Wir Li
niud
•
K"(
- - MJE ion.:
' l =
--
MJEMOO.!)! I"
MJE2IOO.OI '"
V
\
i—••
r^~
--
T
C'2S«
C
MJE1W.93 1
MJE2092.J3 (~
«£=
•UCnm.ra i
=A_
so ;
There are two limitations on ih? power handling ability o* a
transistor: junction temperature and secondary breakdown Safe
operating area curves indicate IQ VCE
lirYll
'!> °' the transistor that
must be observed for reliable operation, e g , the transistor must
not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown. (See AN-415)
a
i.a
3.0
so
it
<a
20
30
\
100
E. COUECTOW EMITTER VOLTAGE [VOLTS!
FIGURE 3 - DARLINGTON CIRCUIT SCHEMATIC
._K
thru
MJE10I3
MJC2MQ
thru
MJC2QB3
n ^
«
,
(
.
1
.
r
r
* 150
% 10 k
S'
I
1
MJE1100
thru
MJE1103
MJ£2100
saw 0-4
t
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
