, LJna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
U.SA
(212) 227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEOOUS) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
1
f
"*N
2
MJ16016
3
I
PIN 1.6ASE
2 BETTER
3. COLLECT OR (CASE)
TO-3 package
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEV
VcEO(SUS)
V
EBO
•
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@Tc=25°C
Junction Temperature
Storage Temperature
VALUE
850
450
6
20
30
10
20
250
200
UNIT
V
V
V
A
A
A
A
W
'C
'C
17
V-,
t !_ i
. f
A
-
f*-N-»)
1
c
t
—•!)•— D
i
PL
I
:
•ran
Ic
ICM
IB
IBM
PC
Tj
Tstg
A
t
xT/L^x / i
^N^ ^/
'
'M33
IMIII
i
• f
-65-200
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.7
UNIT
•c/w
DIM
A
B
C
D
E
G
K
K
L
H
0
0
V
MM
MAX
3900
25.30 36.67
9.3fl 11.10
0.90
1 .10
2.90
ld
i
109?
546
1140 13.50
1675 17.05
19.40 19.62
4.00 4.20
30 00 30 20
430
4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
lc=100mA;l
B
=0
lc= 10A; I
B
= 1A
MIN
MJ16016
TYP.
MAX
UNIT
V
VcEO(SUS)
450
VcE(sat)-1
2.5
V
V
CE(sat)-2
I
C
=15A;I
B
=1.5A
l
c
=15A;l
B
=1.5A,Tc=10CrC
lc=15A; I
B
=1.5A
lc=15A; I
B
=1.5A,T
C
=100'C
VcEv=850V;V
BE
(off)=1 -5V
V
C
Ev=850V;V
B
E(offr1.5V;Tc=100'C
V
CE
= 850V; R
BE
= 50 Q ,T
C
= 100"C
V
EB
= 6V; l
c
=0
lc= 20A ; V
CE
= 5V
I
E
=0; V
C
B=10V;ftest=1.0kHz
7
3.0
3.0
1.5
1.5
0.25
1.5
2.5
V
VeE(sat)
V
ICEV
mA
ICER
mA
IEBO
hpE
1.0
mA
COB
500
PF
Switching times;Resistive Load
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
20
50
ns
lc= 15A , V
CC
= 250V, R
B2
= 1 -6 Q
Ir,,,— 1 RA-tr,.,—
**A
P\A/— "^fiii c
200
500
ns
ts
Duty Cycle=£2.0%
900
2200
250
ns
tf
100
ns
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