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<Ss.mi-C.on.du.ct
oi
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TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
:V
CE
o(sus) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEV
VcEO(SUS)
1
p
MJ16014
3
J
PIN t.BASE
2,
EMITTER
^*\. COLLECT OR (CASE)
2
TO-3 package
(«- N-«^
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@T
c
=25°C
Junction Temperature
Storage Temperature
VALUE
850
450
6
20
30
10
20
250
200
UNIT
V
V
V
A
A
A
A
W
°C
t
1
J
Ifi.
t
U
V—
'
1
'
c
-4—D
|^L~
s^\\^
:
t
B
|
*— u —*
VEBO
Ic
ICM
IB
IBM
PC
Tj
/ \l
i3S
;
\^^^
'•-^3
DIM
A
B
MIN
MAX
3900
25.30
26.67
T
s
tg
-65-200
•c
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.7
UNIT
C
D
E
G
H
^
L
N
0_
9.30 11.10
0.90
1.10
2.90
3.10
1092
546
11.40 13.50
16,75 17.05
19.40 19.62
420
400
U
V
3000
430
3020
4,50
°c/w
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25'C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
l
c
=100mA; I
B
=0
I
C
=10A; I
B
=1-3A
lc=15A; I
B
=2A
I
C
=15A;I
B
=2A,T
C
=100
-
C
I
C
=15A;I
B
=2A
I
C
=15A;I
B
=2A,T
C
=100'C
VcEv=850V;V
BE
(off)=1.5V
V
C
Ev=850V;V
B
E(off)=1 .5V;T
C
=1 OO'C
V
CE
= 850V; RBE= 50 Q ,T
C
= 100'C
V
EB
= 6V; l
c
=0
lc= 20A ; V
C
e= 5V
l
E
=0;VcB=10V;ftest=1.0kHz
5
MIN
MJ16014
TYP.
MAX
UNIT
V
VCEO(SUS)
450
VcE(sat)-1
2.5
V
VcE(sat)-2
3.0
3.0
1.5
1.5
0.25
1.5
2.5
V
VsE(sat)
V
ICEV
ICER
IEBO
mA
mA
1.0
mA
hFE
COB
500
PF
Switching times;Resistive Load
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
20
lc= 15A,Vcc= 250V, R
B2
= 1.6 Q
Duty Cycle =S2.0%
50
ns
ns
ns
ns
200
1200
200
500
ts
2700
350
tf
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