,
Li
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MAC320
MAC320A
TttBCS
Silicon Bidirectional Thyristors
designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
. Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
. Gate Triggering Guaranteed in Three Modes (MAC320 Series) or Four Modes
(MAC320A Series)
MAXIMUM RATINGS
(Tc = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State VoltageO) (Tj = -40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC320-4, MAC320A4
MAC320-6, MAC320A6
MAC320-8, MAC320A8
MAC320-10, MAC320A10
Peak Gate Voltage
On-State Current RMS (Tc = +75°C)
(Full Cycle, Sine Wave, 50 to 60 Hz)
Peak Surge Current (One Full Cycle, 60 Hz, TC = +75°C)
preceded and followed by rated current
Peak Gate Power (TC = +75°C, Pulse Width = 2 us)
Average Gate Power (TC = +75°C, t = 8.3 ms)
Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
T
stg
TRIACs
20 AMPERES RMS
200 thru 800 VOLTS
(TO-220AB1
Symbol
Value
Unit
Volts
VDRM
200
400
600
800
VGM
'T(RMS)
10
20
150
Volts
Amp
Amp
P
GM
20
0.5
Watts
Watt
Amp
-40 to+125
-40 to+150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
9JC
Max
1.8
Unit
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MAC320 Series MAC320A Series
ELECTRICAL CHARACTERISTICS
(T
c
= 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current
(VD Rated VDRM. Gate Open)
Tj = 25°C
Tj = +125°C
Symbol
!
DRM
Min
—
Typ
—
1.4
Max
10
2
1.7
Unit
HA
mA
Peak On-State Voltage (Either Direction)
(IjM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle s; 2%)
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2 (+), G(+); MT2 (+), G(-); MT2 (-), G(-)
MT2 (-), G(+) "A" SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2 (+), G(+); MT2 (+). G(-); MT2 (-), G(-)
MT2 (-), G(+) "A" SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM.
R
L =
1
° kft, Tj =+110°C)
MT2 (+), G(+); MT2 (-), G(-); MT2 (+), G(-);
MT2 (-), G(+) "A" SUFFIX ONLY
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 28 A,
IQT = 120 mA, Rise Time = 0.1 (is, Pulse Width = 2 jis)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, 'TM
=
28 A, Commutating
di/dt = 10 A/ms, Gate Unenergized, TC = +75°C)
VTM
IGT
—
Volts
mA
—
—
50
75
VGT
Volts
0.9
1.4
2
2.5
0.2
0.2
IH
<gt
dv/dt(C)
~
~
6
40
mA
1.5
~
US
5
V/ns
FIGURE 1 — RMS CURRENT DERATING
FIGURE 2 — ON-STATE POWER DISSIPATION
0
2.0
4.0
6.0
8.0
10
12
14
16
!T(RMS).
RMS
ON-STATE CURRENT (AMP)
18
20
0
2.0
4.0
6.0 8.0
10
12
14
16
!T(RMS).
RMS
ON-STATE CURRENT (AMP)
18
20
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