SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for use as a load switch.
KMA3D7P20SA
P-Ch Trench MOSFET
L
E
B
L
FEATURES
・V
DSS
=-20V, I
D
=-3.7A
・Drain
to Source on-state Resistance
A
H
2
G
3
R
DS(ON)
=76mΩ(Max.) @ V
GS
=-4.5V
R
DS(ON)
=112mΩ(Max.) @ V
GS
=-2.5V
1
Q
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
Max 0.1.
C
N
K
M
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
DC@Ta=25℃
Drain Current
Pulsed
Drain to Source Diode Forward Current
Drain
Power Dissipation
Ta=25℃
Ta=100℃
(Note1)
P
D
(Note1)
T
j
T
stg
R
thJA
0.6
150
-55½150
100
℃
℃
℃/W
(Note1)
I
DP
I
S
-16
-16
1.25
W
A
(Note1)
SYMBOL
V
DSS
V
GSS
I
D
P-Ch
-20
±12
-3.7
A
UNIT
V
V
SOT-23
KNH
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient (Note1)
Note1) Surface Mounted on 1”
×1”
FR4 Board, t≤5sec.
PIN CONNECTION (TOP VIEW)
D
3
3
2
1
2
1
G
S
2009. 6. 10
Revision No : 1
J
D
1/4
KMA3D7P20SA
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Source to Drain Diode Ratings
Source to Drain Forward Voltage
V
SD
V
GS
=0V, I
S
=-1.0A
(Note2)
-
-0.8
-1.2
V
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-10V, V
GS
=-4.5V ,
I
D
=-2.8A, R
G
=6Ω
(Note2)
V
DS
=-10V, I
D
=-2.8A,
V
GS
=-4.5V
(Note2)
V
DS
=-10V, f=1MHz,
V
GS
=0V
-
-
-
-
-
-
-
-
-
-
443
92
51
4.37
0.54
1.54
6.2
18
50
33
-
-
-
-
-
-
-
-
ns
-
-
nC
pF
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
V
GS
=-2.5V, I
D
=-2.3A
(Note2)
-
90
112
V
GS
=0V, I
D
=-250μ
A
V
GS
=0V, V
DS
=-20V
V
GS
=±12V, V
DS
=0V
V
DS
=V
GS,
I
D
=-250μ
A
V
GS
=-4.5V, I
D
=-2.8A
(Note2)
-20
-
-
-0.55
-
-
-
-
-
65
-
-1
±100
-1.5
76
mΩ
V
μ
A
nA
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Note2) Pulse Test : Pulse width <300㎲ , Duty cycle < 2%
2009. 6. 10
Revision No : 1
2/4
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