Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics
at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=--68A, VGS=0V
See Fig.3
IS=--68A, VGS=0V, di/dt=--100A/μs
VDS=--48V, VGS=--10V, ID=--68A
See Fig.2
VDS=--20V, f=1MHz
Conditions
-1mA,
VGS=0V
ID=-
VDS=--75V, VGS=0V
VGS=±16V, VDS=0V
-10V,
ID=-
-1mA
VDS=-
-10V,
ID=--34A
VDS=-
-10V
ID=--34A, VGS=-
-4V
ID=--34A, VGS=-
--1.2
120
6.5
8.3
13400
1000
740
70
245
1400
650
300
30
70
--0.9
146
470
-
-1.5
8.5
11.4
Ratings
min
--75
--10
±10
--2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Note on usage : Since the BMS3004 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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