JMnic
Product Specification
Silicon NPN Power Transistors
2SC4057
DESCRIPTION
・With
TO-247 package
・High
voltage;high speed
・Switching
power transistor
・
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-247) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
600
450
7
8
16
4
8
80
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.56
UNIT
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
At rated voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
At rated voltage
I
C
=4A ; V
CE
=5V
I
C
=1mA ; V
CE
=5V
I
C
=0.8A ; V
CE
=10V
10
5
20
CONDITIONS
I
C
=0.2A; I
B
=0
I
C
=4A ;I
B
=0.8A
I
C
=4A ;I
B
=0.8A
MIN
450
TYP.
2SC4057
MAX
UNIT
V
1.0
1.5
V
V
0.1
mA
0.1
mA
MHz
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=4A
I
B1
=0.8A; I
B2
=1.6A
V
BB2
=4V ,R
L
=37.5Ω
0.5
2.0
0.2
μs
μs
μs
2
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