10A05 thru 10A10
®
Pb Free Plating Product
10A05 thru 10A10
Pb
10.0 Ampere Plastic Silicon General Purpose Rectifier Diodes
Features
•
Low cost
•
Diffused junction
•
Low forward voltage drop
•
Low reverse leakage current
•
High current capability
•
The plastic material carries UL recognition 94V-0
1.0(25.4)
MIN
.052(1.3)
DIA
.048(1.2)
R-6
.360(9.1)
.340(8.6)
2100
.360(9.1)
DIA
.340(8.6)
Mechanical Data
•
Case:
JEDEC R-6 molded plastic
•
Polarity:
Color band denotes cathode
•
Mounting position:
Any
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
Absolute Maximum Ratings and Characteristics
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load..
For capacitive load, derate current by 20%
.
Symbols
10A05 10A1
10A2 10A4 10A6 10A8 10A10 Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current @T
A
=50 C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum forward voltage at 10A DC
Maximum DC reverse current
o
@T
J
= 25 C
at rated DC blocking voltage @T
J
= 100
o
C
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating temperature range
Storage temperature range
o
o
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
θJA
T
J
T
S
50
35
50
100
70
100
200
140
200
400
280
400
10
600
1
10
100
150
10
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
µA
pF
o
C/W
o
-55 to+125
-55 to+150
C
C
o
Notes:
1. Measured at 1 MH
Z
and applied reverse voltage of 4V D.C.
2. Thermal Resistance Junction to Ambient.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
10A05 thru 10A10
®
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
500
INSTANTANEOUS FORWARD CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
12
10
8
6
4
2
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
100
40
10
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
500
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
400
FORWARD VOLTAGE,(V)
300
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
200
100
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
100
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
10
REVERSE LEAKAGE CURRENT, (
µ
A)
Tj=100 C
FIG.5 - TYPICAL THERMAL RESISTANCE VS. LEAD LENGTH
1.0
THERMAL RESISTANCE, ( C/W)
25
20
15
10
5
.1
Tj=25 C
.01
0
20
40
60
80
100 120 140
0
.1
.2
.3
.4
.5
.6
.7
.8
.9
1.0
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
EQUAL LEAD LENGTH TO HEAT SINK, INCHES
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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