UNISONIC TECHNOLOGIES CO., LTD
UH11K
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
DUAL BIAS RESISTOR
TRANSISTORS
DESCRIPTION
The UTC
UH11K
is a dual bias resistor transistors, it uses UTC’s
advanced technology to provide customers with saving board space,
reducing component count, etc.
The UTC
UH11K
is suitable for low power surface mount
applications, etc.
FEATURES
* Reducing component count
* Saving board space
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Pin Assignment
1
2
3
4
5
6
E1 B1 C2 E2 B2 C1
Packing
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
UH11KL-AL6-R
UH11KG-AL6-R
SOT-363
Note: Pin Assignment: G: Gate D: Drain
S: Source
UH11KL-AL6-R
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) R: Tape Reel
(2) AL6: SOT-363
(3) L: Lead Free, G: Halogen Free
MARKING
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R218-027.A
UH11K
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Collector Current
I
C
100
mA
Power Dissipation
P
D
150
mW
Junction Temperature
T
J
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
TYP MAX UNIT
V
V
nA
nA
mA
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=10µA, I
E
=0
50
Collector-Emitter Breakdown Voltage (Note 1)
BV
CEO
I
C
=2.0mA, I
B
=0
50
Collector-Base Cutoff Current
I
CBO
V
CB
=50V, I
E
=0
Collector-Emitter Cutoff Current
I
CEO
V
CE
=50V, I
B
=0
Emitter-Base Cutoff Current
I
EBO
V
EB
=6.0V, I
C
=0
ON CHARACTERISTICS
(Note 2)
DC Current Gain
h
FE
V
CE
=10V, I
C
=5.0mA
35
Output Voltage (on)
V
OL
V
CC
=5.0V, V
B
=2.5V, R
L
=1.0 kΩ
ON CHARACTERISTICS
(Note 2)
Input Resistor
R
1
7.0
Resistor Ratio
R
1
/R
2
0.8
Notes: 1. Pulse Test: Pulse Width<300µs, Duty Cycle<2.0%
2. Pulse Test: Pulse Width<300ms, Duty Cycle<2.0%
100
500
0.5
60
0.2
10
1.0
13
1.2
V
kΩ
kΩ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-027.A
UH11K
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-027.A
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