UNISONIC TECHNOLOGIES CO., LTD
UF5210
-40A, -100V P-CHANNEL
POWER MOSFET
DESCRIPTION
POWER MOSFET
The UTC
UF5210
is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC
UF5210
is suitable for all commercial-industrial
applications, etc.
1
TO-220
FEATURES
* R
DS(ON)
<0.06Ω @ V
GS
=-10V
* High Switching Speed
* Dynamic dv/dt Rating
SYMBOL
ORDERING INFORMATION
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
UF5210L-TA3-T
UF5210G-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING INFORMATION
PACKAGE
MARKING
TO-220
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-845.B
UF5210
ABSOLUTE MAXIMUM RATING
POWER MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-100
V
Gate-Source Voltage
V
GSS
±20
V
V
GS
=-10V, T
C
=25°C
-40
A
Continuous
I
D
Drain Current
V
GS
=-10V, T
C
=100°C
-29
A
Pulsed (Note 2)
I
DM
-140
A
Avalanche Current (Note 2)
I
AR
-21
A
780
mJ
Single Pulse (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
20
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.0
V/ns
200
W
Power Dissipation (T
C
=25°C)
P
D
Linear Derating Factor
1.3
W/°C
Junction Temperature
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. V
DD
=-25V, Starting T
J
=25°C, L=3.5mH, R
G
=25Ω, I
AS
=-21A.
4. I
SD
≤-21A,
di/dt≤-480A/µs, V
DD
≤BV
DSS
, T
J
≤150°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
θ
JA
θ
JC
RATINGS
62
0.75
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-845.B
UF5210
POWER MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
=0V, I
D
=-250µA
MIN TYP MAX UNIT
-100
-0.11
-25
-250
100
-100
V
V/°C
µA
µA
nA
nA
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
∆BV
DSS
/∆T
J
Reference to 25°C, I
D
=-1mA
I
DSS
I
GSS
V
DS
=-100V, V
GS
=0V
V
DS
=-80V, V
GS
=0V, T
J
=150°C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Static Drain-to-Source On-Resistance
R
DS(ON)
V
GS
=-10V, I
D
=-24A (Note 2)
0.06
Ω
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
-2.0
-4.0 V
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
2700
pF
V
GS
=0V, V
DS
=-25V, f=1.0MHz
Output Capacitance
C
OSS
790
pF
Reverse Transfer Capacitance
C
RSS
450
pF
SWITCHING PARAMETERS
180 nC
Total Gate Charge
Q
G
I
D
=-21A, V
DS
=-80V, V
GS
=-10V
Gate-to-Source Charge
Q
GS
25 nC
(Note 2)
Gate-to-Drain ("Miller") Charge
Q
GD
97 nC
Turn-ON Delay Time
t
D(ON)
17
ns
Rise Time
t
R
86
ns
V
DD
=-50V, I
D
=-21A, R
G
=2.5Ω
R
D
=2.4Ω, (Note 2)
Turn-OFF Delay Time
t
D(OFF)
79
ns
Fall Time
t
F
81
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
I
S
-40
A
Current
Maximum Body-Diode Pulsed Current
I
SM
-140 A
(Note 1)
Drain-Source Diode Forward Voltage
V
SD
T
J
=25°C, I
S
=-21A, V
GS
=0V (Note 2)
-1.6 V
170 260 ns
Body Diode Reverse Recovery Time
t
RR
T
J
=25°C, I
F
=-21A, di/dt=-100A/µs
(Note 2)
Body Diode Reverse Recovery Charge
Q
RR
1.2 1.8 µC
Intrinsic turn-on time is negligible (turn-on is dominated by
Forward Turn-On Time
t
ON
L
S
+L
D
)
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-845.B
UF5210
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-845.B
UF5210
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-845.B
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
