'Jsuzu <^E.mi-L.onauctoi ^Pioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
T6401, T6411, T6421 Series
30-A Silicon Triacs
For Power-Switching and Power Control
Feature!:
800V, 125 Deg. C Tj Operating
High dv/dt and dl/dt Capability
Low Switching Losses
High Pulse Current Capability
Low Forward and Reverse Leakage
Sipos Oxide Glass Multilayer Passivation System
Advanced UnisurfaCQ Construction
Precise Ion Implanted Dilluslon Source
TERMINAL DESIGNATIONS
PRESS-FIT TYPES
T6401 SERIES
STUD TYPES
T6411
SERIES
ISOLATED-STUD TYPES
T6421 SERIES
MAXIMUM RATINGS,
Absolute-Maximum Values:
T6401B
T6411B
T6421B
REPETITIVE PEAK OFF-STATE VOLTAGE:'
Gale open, Tj
-
-50 to 125° C
RMS ON-STATE CURRENT (Conduction angle
- 360°):
Case temperature
T
c
= 80° C (Press-fit types)
' 85« C (Stud types)
• 80° C (Isolated-stud types)
For other conditions ,,.,,.
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:
For one cycle of applied principal voltage
60 Hz (sinusoidal)
50 Hz (sinusoidal)
For more than one cycle of applied principal voltage
RATE-OF-CHANGE OF ON-STATE CURRENT:
VOM = VOBOM. IOT = 200 mA. t, - 0.1 /« (See Fig. 13)
FUSING CURRENT (lor trite protection):
Tj = -40 to
100°
C. I *
1.25
to 10 ms
PEAK GATE-TRIGGER CURRENT:
1
For 1
ps
max.. See
Fig.
7
GATE POWER DISSIPATION
PEAK (For 1
fis
max,. I
QTW
< 4 A, See Fig. 7)
AVERAGE
TEMPERATURE RANGE:*
Storage
Operating (Case)
TERMINAL TEMPERATURE (During soldering):
For 10 s max. (terminals and case)
STUD TORQUE:
Recommended
,
Maximum (DO NOT EXCEED)
200
T6401D
T6411D
T6421D
400
T6401M
T6411M
TB421M
T6401N
T6411N
—
30
30
30
See
Fig.
3 ,
. 300 -
.
265.
. See
Fig.
4
di/dt
100
I't
'GTM
450 ~_
12
A's
A
W
W
. 0.75 -
TC
Tr
. -65 to 150 .
. -65 to 100 .
-226 .
-35-
. 50-
in-lb
in-lb
"For either polarity of ma terminal 2 voltage (V
MT?
) with reference to main terminal 1.
ain
•For either polarity to gatte voltage (V
G
) with reference to main terminal 1,
A
For temperature measureme
rement reference point, see Dimensional Outline.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
T6401, T6411, T6421 Series
ELECTRICAL CHARACTERISTICS,
At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperature
LIMITS
CHARACTERISTIC
SYMBOL
For All Types
Unless Otherwise Specified
Mln.
Typ.
0.2
2.1
Max.
4
2.5
mA
V
UNITS
Peak Off-Slate Current:*
Gate open, Tj = i25°C. V
O
HOM
=
Max. rated value
Maximum On-Stale Voltage:*
Fori,= 100 A (peak),TG*25°C
DC Holding Current:*
Gate open, Initial principal current = 150 mA (DC), v
0
= 12V:
T
C
=25°C
For other case temperatures
Critical Rate-of-Rise of Commutation Voltage:*
For V
D
= Venom I TCHMSI = 30 A, commulating
di/dt - 16 A/ms, gate unsnergized (See Fig. 14):
T
c
= 90° C (Press-fit types) ' .
= 85° C (Stud types)
= 80° C (Isolated-stud types)
Critical Rate-of-Rlse of Off-State Voltage:*
For V
D
- V
DnoM
, exponential voltage rise, gate open,
T
C
= 125°C;
T6401B, T6411B, T6421B
T6401D, T6411D, T6421D
...
T6401M.T6411M, T6421M
T6401N T6411N
DC Gate-Trigger Current:*
1
For VD" 12 V (DC),
R
L
= 30n,
T
C
=25°C
Mode
l
+
111-
I"
III*
V
MT2
positive
negative
positive
negative
V
0
positive
negative
negative
positive
IOHOM
V™
_
IHO
-
25
See Fig. 6
60
mA
. . . .
dv/dt
3
3
3
20
20
20
V///S
dv/dt
40
25
20
10
200
150
100
50
15
20
30
40
Si
e Figs, 8 (
!c9
-
V/fjs
IGT
50
50
80
80
mA
DC Gate-Trigger Voltage:**
Forv
D
= 12V(DC), R
t
= 30 O,
T
C
=25°C
For other case temperatures
Forvo = VUTOM. R
L
= 125 n, T
c
= 100" C
Gale-Controlled Turn-On Time:
(Delay Time • Rise Time)
Forv
0
= V
OROU
, lot = 200mA, t,= 0.1
v$.
i
r
* 45 A (peak) T
c
= 25°C (See Figs 7 & 12)
Thermal Resistance, Junctlon-to-Case:
Steady-State
Press-lit types
Stud
,.,,...
,,,,,,....
Transient (Press-fit & stud types)
,,
:
1.35
See Fig. 1 J
2.5
V
0.2
.
t,,
1.7
3
/*
,
.
RWC
-
See Fig. 2
—
0.8
0.9
°C/W
Thermal Resistance, Juncllon-to-Hex (Stud, See Dim. Outline):
—
1
•For either polarity of main terminal 2 voltage (V
U
u) with reference to main terminal 1.
•For either polarity of gate voltage (V
o
) with reference 10 main terminal 1.
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