SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
100
± 20
85
d
83
240
60
180
227
b
3.75
- 55 to 150
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
R
thJA
R
thJC
Limit
40
0.55
Unit
°C/W
Document Number: 64833
S11-2239-Rev. B, 14-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
c
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
≥
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
DS
= 15 V, I
D
= 20 A
Min.
100
2.5
Typ.
Max.
Unit
4.5
± 250
1
50
250
V
nA
µA
A
120
0.0080
0.0146
70
0.0100
0.0185
Ω
S
4660
V
GS
= 0 V, V
DS
= 50 V, f = 1 MHz
315
150
77
V
DS
= 50 V, V
GS
= 10 V, I
D
= 75 A
f = 1 MHz
V
DD
= 50 V, R
L
= 0.67
Ω
I
D
≅
75 A, V
GEN
= 10 V, R
g
= 1
Ω
0.25
25
20
1.2
15
12
25
8
2.4
25
20
40
15
ns
Ω
120
nC
pF
Drain-Source Body Diode Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 5 A, dI/dt = 100 A/µs
I
F
= 5 A, V
GS
= 0 V
0.8
74
6.7
250
85
240
1.5
115
10
400
A
V
ns
A
nC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 64833
S11-2239-Rev. B, 14-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
120
V
GS
= 10
V
thru 7
V
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
80
6
60
V
GS
= 6
V
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
0
40
20
0
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
150
0.020
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
120
T
C
= - 55 °C
90
T
C
= 25 °C
60
T
C
= 125 °C
0.015
0.010
V
GS
= 10
V
0.005
30
0
0
10
20
30
40
50
I
D
- Drain Current (A)
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
Transconductance
6000
C
iss
10
On-Resistance vs. Drain Current
I
D
= 16 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 50
V
6
V
DS
= 25
V
V
DS
= 75
V
4
5000
C - Capacitance (pF)
4000
3000
2000
1000
C
rss
0
C
oss
2
0
0
20
40
60
80
100
0
20
40
60
80
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 64833
S11-2239-Rev. B, 14-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.1
I
D
= 20 A
R
DS(on)
- On-Resistance (Ω)
10
1.7
V
GS
= 10
V
1.3
100
T
J
= 150 °C
T
J
= 25 °C
R
DS(on)
- On-Resistance (Normalized)
1
0.1
T
J
= - 50 °C
0.9
0.01
0.5
- 50
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
GS
- Gate-to-Source
Voltage
(V)
On-Resistance vs. Junction Temperature
0.05
0.8
Source-Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.04
V
GS(th)
Variance
(V)
0.3
0.03
- 0.2
I
D
= 1 mA
- 0.7
I
D
= 250
µA
0.02
T
J
= 125 °C
0.01
T
J
= 25 °C
0.00
3
4
5
6
7
8
V
GS
- Gate-to-Source
Voltage
(V)
9
10
- 1.2
- 1.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
130
I
D
= 1 mA
124
100
Threshold Voltage
BVDSS (V)
I
DAV
(A)
118
T
J
= 150 °C
10
T
J
= 25 °C
112
106
100
- 50
- 25
0
25
50
75
100
125
150
1
10
-5
10
-4
10
-3
t
AV
(s)
10
-2
10
-1
1
T
J
- Junction Temperature (°C)
Drain Source Breakdown Voltage vs. Junction Temperature
Single Pulse Avalanche Current Capability vs. Time
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Document Number: 64833
S11-2239-Rev. B, 14-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
Limited
by
R
DS(on)
*
100
I
D
- Drain Current (A)
100
µs
1 ms
10
10 ms
100 ms, DC
1
0.1
T
C
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
300
120
240
I
D
- Drain Current (A)
100
80
Package Limited
Power (W)
180
60
120
40
60
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Power Derating, Junction-to-Case
Current Derating*
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64833
S11-2239-Rev. B, 14-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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