Datasheet> 器件分类 > 分立半导体> 瞬态抑制二极管> SMF120A

SMF120A: 产品描述1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219; 产品类别分立半导体瞬态抑制二极管; 文件大小410KB，共4页; 制造商LGE; 官网地址http://www.luguang.cn/web_en/index.html

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SMF120A概述

1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219

SMF120A规格参数

参数名称	属性值
封装类型 Case Style	SOD-123FL
Ppk(W)	200
MIN_(V)	133.00
MAX_(V)	147.00
Vwm_(V)	120.0
Ir_(uA)	1
Ippm_(A)	1.04
Vc_(V)	193.0
class	Diodes

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SMF5.0A-SMF220A

Surface Mount ESD Protection Diodes

SOD-123FL

Features

For surface mounted applications

Low profile package

Low incremental surge resistance,excellent

clamping capability

200W peak pulse power capability with a

10/1000µs wave from,repetition rate (duty

cycle):0.01%

High temperature soldering guaranteed:

260℃/10 seconds, at terminals

0.047(1.19)

0.043(1.09)

0.075(1.90)

0.067(1.70)

0.043(1.09)

0.035(0.89)

0.114(2.9)

0.098(2.5)

0.008(0.20)

0.004(0.10)

0.030(0.76)

0.018(0.45)

Mechanical Data

Case: JEDEC SOD-123FL, molded plastic

Polarity: Color band denotes positive end

( cathode ) except for bidirectional

Marking code: see TABLE 1

Mounting position: Any

Dimensions in inches and(millimeters)

0.154(3.9)

0.138(3.5)

ABSOLUTE MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified

SYMBOL

VALUE

UNITS

Non-repetitive peak pulse power dissipation

with a 10/1000µs waveform (NOTE 1)

Peak pulse current 10/1000

µs

wavefrom (NOTE 1)

Forw ard voltage @ I

=12A

Thermal resistance junction to ambient

Operating temperature junction range

Storage temperature range

NOTE:(1)Non-repetitive current pulse and derated above T

=25℃

PPM

θJA

STG

200

See

Table1

3.5

180

- 55 to +150

K/W

℃

http://www.luguang.cn

mail:lge@luguang.cn

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