SM4TY
Automotive 400 W Transil™
Datasheet
−
production data
Features
■
Peak pulse power:
– 400 W (10/1000 µs)
– 2.3 kW (8/20 µs)
Stand-off voltage range: from 5 V to 70 V
Unidirectional and bidirectional types
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating T
j max
: 150 °C
High power capability at T
j max
:
– 270 W (10/1000 µs)
JEDEC registered package outline
Resin meets UL 94, V0
AEC-Q101 qualified
K
A
■
■
■
Unidirectional
Bidirectional
SMA
(JEDEC DO-214AC)
■
■
Description
The SM4TY Transil series has been designed to
protect sensitive automotive circuits against
surges defined in ISO 7637-2 and against
electrostatic discharges according to ISO 10605.
The planar technology makes it compatible with
high-end circuits where low leakage current and
high junction temperature are required to provide
reliability and stability over time. SM4TY devices
are packaged in SMA (SMA footprint in
accordance with IPC 7531 standard).
■
■
■
Complies with the following standards
■
ISO 10605, C = 150 pF, R = 330
Ω:
– 30 kV (air discharge)
– 30 kV (contact discharge)
ISO 10605, C = 330 pF, R = 330
Ω:
– 30 kV (air discharge)
– 30 kV (contact discharge)
ISO 7637-2
(a)
– pulse 1: V
S
= -100 V
– pulse 2a: V
S
= +50 V
– pulse 3a: V
S
= -150 V
– pulse 3b: V
S
= +100 V
■
■
a. Not applicable to parts with stand-off voltage lower
than the average battery voltage (13.5 V)
TM:
Transil is a trademark of STMicroelectronics
March 2012
This is information on a product in full production.
Doc ID 17862 Rev 3
1/12
www.st.com
12
Characteristics
SM4TY
1
Table 1.
Symbol
Characteristics
Absolute maximum ratings (T
amb
= 25
°C
)
Parameter
ISO 10605 (C = 150 pF, R = 330
Ω)
Contact discharge
Air discharge
ISO 10605, C = 150 pF, R = 330
Ω:
Contact discharge
Air discharge
T
j initial
= T
amb
Value
Unit
V
PP
Peak pulse voltage
30
30
30
30
400
-65 to + 150
-55 to + 150
260
kV
P
PP
T
stg
T
j
T
L
Peak pulse power dissipation
(1)
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
W
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
%I
PP
100
50
Pulse waveform
tr = rise time (µs)
tp = pulse duration time (µs)
0
tr
tp
t
2/12
Doc ID 17862 Rev 3
SM4TY
Table 2.
Characteristics
Electrical characteristics, typical values if not otherwise stated (T
amb
= 25 °C)
I
RM
max @ V
RM
V
BR
@ I
R (1)
R
D
V
CL
@ I
PP
V @ I
PP
10/1000
CL
10/1000 µs
8/20 µs
µs
max.
mA
6.74
7.58
9.9
7.1
8.0
10.4
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
(3)
9.2
A
(4)
43.5
Ω
0.049
0.091
0.145
0.201
0.259
0.298
0.361
0.514
0.637
0.760
0.912
1.07
1.26
1.39
1.70
2.49
2.91
3.56
5.21
7.72
max.
V
(3)
A
(4)
Ω
R
D
8/20
µs
αT
(2)
Order code
25 °C 85 °C
µA
V
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5
6.5
8.5
10
12
13
15
18
20
22
24
26
28
30
33
40
43
48
58
70
min. typ. max.
V
6.4
7.2
9.4
max
10-4/
°C
5.7
6.1
7.3
7.8
8.3
8.4
8.8
9.2
9.4
9.6
9.6
9.7
9.8
9.9
10
10.1
10.2
10.3
10.4
10.5
SM4T6V7AY/CAY
SM4T7V6AY/CAY
SM4T10AY/CAY
SM4T12AY/CAY
SM4T14AY/CAY
SM4T15AY/CAY
SM4T18AY/CAY
SM4T21AY/CAY
SM4T23AY/CAY
SM4T26AY/CAY
SM4T28AY/CAY
SM4T30AY/CAY
SM4T33AY/CAY
SM4T35AY/CAY
SM4T39AY/CAY
SM4T47AY/CAY
SM4T50AY/CAY
SM4T56AY/CAY
SM4T68AY/CAY
SM4T82AY/CAY
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
13.4 174 0.036
14.5 160 0.041
19.5 124 0.073
21.7 106 0.089
25.3
27.2
32.5
39.3
42.8
48.3
50
53.5
59
64.3
69.7
84
91
100
121
146
91
85
71
59
54
48
46
43
39
36
33
27
25
23
19
16
0.116
0.132
0.197
0.291
0.338
0.444
0.446
0.502
0.632
0.762
0.884
1.30
1.53
1.79
2.62
3.75
11.2 35.7
14.4 27.7
17.0 23.5
19.9 20.1
21.5 18.6
24.4 16.4
29.2 13.7
32.4 12.3
35.5 11.2
38.9 10.3
42.1
45.4
48.4
53.3
64.5
69.4
77.4
93.6
113
9.5
8.8
8.3
7.5
6.2
5.7
5.2
4.3
3.5
11.1 11.7 12.3
13.3 14.0 14.7
14.4 15.2 16.0
16.7 17.6 18.5
20.0 21.1 22.2
22.2 23.4 24.6
24.4 25.7 27.0
26.7 28.1 29.5
28.9 30.4 31.9
31.1 32.7 34.3
33.3 35.1 36.9
36.7 38.6 40.5
44.4 46.7 49.0
47.8 50.3 52.8
53.3 56.1 58.9
64.4 67.8 71.2
77.8 81.9 86.0
1. Pulse test: t
p
< 50 ms
2. To calculate maximum clamping voltage at other surge level, use the following formula: V
CL
max = V
CL
- R
D
x (I
PP
- I
PPappli
)
where I
PPappli
is the surge current in the application
3. To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
@ T
J
= V
BR
@ 25 °C x (1 +
αT
x (T
J
- 25))
V
CL
@ T
J
= V
CL
@ 25 °C x (1 +
αT
x (T
J
- 25))
4. Surge capability given for both directions for unidirectional and bidirectional types.
Doc ID 17862 Rev 3
3/12
Characteristics
SM4TY
Figure 3.
Peak pulse power dissipation
versus initial junction temperature
Figure 4.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
500
P
PP
(W)
Pulse = 10/1000 µs
10.0
P
PP
(kW)
400
300
1.0
200
100
0
0
25
50
75
100
125
150
T
j
(°C)
175
0.1
1.0E-03
tp(ms)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Figure 5.
Clamping voltage versus peak
pulse current (exponential
waveform, maximum values)
Figure 6.
Junction capacitance versus
reverse applied voltage for
unidirectional types (typical values)
F = 1 Mhz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
1000.0
I
PP
(A)
T
j
initial = 25 °C
10000
C(pF)
100.0
1000
8/20 µs
10.0
10/1000 µs
SM4T82AY/CAY
SM4T30AY/CAY
100
SM4T30AY
SM4T6V7AY/CAY
SM4T6V7AY
1.0
SM4T82AY
0.1
1
V
CL
(V)
100
1000
10
1
10
100
V
R
(V)
1000
10
Figure 7.
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
F = 1 Mhz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
Figure 8.
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
10000
C(pF)
1.00
Z
th(j-a)
/R
th(j-a)
Recommended pad layout
Printed circuit board FR4,
copper thickness = 35 µm
1000
SM4T6V7CAY
0.10
SM4T30CAY
100
SM4T82CAY
10
1
10
100
V
R
(V)
1000
tp(s)
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
4/12
Doc ID 17862 Rev 3
SM4TY
Characteristics
Figure 9.
Thermal resistance junction to
ambient versus copper surface
under each lead
Printed circuit board FR4,
copper thickness = 35 µm
Figure 10. Leakage current versus junction
temperature (typical values)
1.E+03
130
120
110
100
90
80
70
60
50
40
30
20
10
0
R
th(j-a)
(°C/W)
I
R
(nA)
1.E+02
V
R
= V
RM
V
RM
< 10 V
1.E+01
1.E+00
V
R
= V
RM
V
RM
≥
10 V
S
Cu
(cm²)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.E-01
25
50
75
100
125
T
j
(°C)
150
0.0
Figure 11. Peak forward voltage drop versus peak forward current (typical values)
1.0E+02
I
FM
(A)
1.0E+01
T
j
= 125 °C
1.0E+00
T
j
= 25 °C
1.0E-01
1.0E-02
0.0
0.5
1.0
1.5
2.0
2.5
V
FM
(V)
3.0
3.5
Doc ID 17862 Rev 3
5/12
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