<^E,mL-L.onaiLctoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
Line.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRF510, SJHF510
100
PRODUCT SUMMARY
V
DS
(V)
^DSIon) (
n
)
V
GS
= 10V
8.3
2.3
3.8
Single
0.54
Q
g
(Max.) (nC)
Qgs
(nC)
Qgd(nC)
Configuration
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
TO-220AB
N-Channel MOSFET
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF510PbF
SIHF510-E3
IRF510
SIHF510
ABSOLUTE MAXIMUM RATINGS (T
c
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
3
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
3
Repetitive Avalanche Energy
3
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
s
ai
10V
v^
at
i u v
Tc = 25
°
C
SYMBOL
LIMIT
UNIT
VDS
VGS
ic=iOO O
100
±20
5.6
4.0
20
0.29
V
ID
I DM
A
W/°C
mj
A
mJ
W
V/ns
°C
Ibf • in
N •m
EAS
IAR
EAR
T
c
= 25 °C
PD
dV/dt
Tj, T
stg
100
5.6
4.3
43
5.5
-5510 + 175
300
d
for 10s
6-32 or M3 screw
10
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting Tj = 25 °C, L = 4.8 mH, R
g
= 25 n, I
AS
= 5.6 A (see fig. 12).
c. I
SD
< 5.6 A, dl/dt < 75 A/us, V
DD
< V
DS
, Tj < 175 °C.
d. 1.6 mm from case.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
IRF510, SJHF510
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
RthJC
TYP.
-
MAX.
62
-
3.5
UNIT
0.50
-
°c/w
SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
3
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Cjss
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
AV
DS
/Tj
Ves(th)
IGSS
IDSS
f^DSfon)
9fs
VGS = 0 V, I
D
= 250 |jA
100
-
-
-
4.0
V
Reference to 25 °C, I
D
= 1 mA
VDS = V
GS
, ID = 250 uA
V
GS
= ± 20 V
V
DS
= 100V, V
GS
= OV
V
DS
= 80 V, V
GS
= 0 V, Tj = 150 °C
V
GS
= 10V
-
2.0
-
-
-
-
1.3
0.12
-
-
-
-
-
-
v/°c
V
nA
uA
± 100
25
250
ID =3.4 A
b
0.54
-
u
V
DS
= 50 V, ID = 3.4 A
b
s
VGS = 0 V,
V
DS
= 25 V,
-
-
-
-
-
-
-
180
81
15
-
-
-
6.9
16
15
9.4
4.5
-
-
-
8.3
2.3
3.8
-
-
-
-
-
C
055
Crss
PF
f = 1.0 MHz, see fig. 5
ID = 5.6 A, V
DS
= 80V
VGS = 10V
V
DS
= 10V,
see fig. 6 and 1 3
b
Qg
Qgs
Qgd
td(on)
tr
td(off)
nC
V
DD
= 5 0V, b = 5.6 A
R
g
= 24 n, R
D
= 8.4n, see fig. 10
b
-
-
-
ns
tf
LD
Ls
Between lead,
6 mm (0.25") from
die contact
'
-
/f'--5\e and center of
^~^
-
7.5
-vT^
-
nH
Is
ISM
VSD
trr
Qrr
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
s\i
(] HjjO
xti|
-
-
-
-
-
-
-
-
100
5.6
A
20
2.5
200
Tj = 25 °C, l
s
= 5.6 A, V
GS
= 0 V
b
T
9^ °C* \^
^ fi A rtl/Ht
innA/iicb
V
ns
uC
0.44
0.88
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width < 300 us; duty cycle < 2 %.
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