SGM0410S
Elektronische Bauelemente
2.2A , 100V , R
DS(ON)
310 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SGM0410S provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
SOT-89
A
Top View
CB
1
2
3
4
K
E
L
D
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
F
G
Millimeter
Min.
Max.
4.40
4.60
4.05
4.25
2.40
2.60
1.40
1.60
3.00 REF.
0.40
0.52
H
Millimeter
Min.
Max.
-
-
0.89
1.20
0.35
0.41
0.70
0.80
1.50 REF.
J
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
MARKING
0410S
= Date code
D
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
Leader Size
7 inch
1
G
24
3
S
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V
T
A
=70°
C
Pulsed Drain Current
Power Dissipation
3
2
1
Symbol
V
DS
V
GS
T
A
=25°
C
I
D
Rating
100
±20
2.2
1.7
Unit
V
V
A
A
A
W
°
C
I
DM
T
A
=25°
C
P
D
T
J
, T
STG
5.5
1.5
-55~150
Operating Junction & Storage Temperature
Thermal Resistance Rating
Thermal Resistance Junction-Ambient (Max).
Thermal Resistance Junction-Case (Max).
1
1
R
θJA
R
θJC
85
36
° /W
C
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Sep-2012 Rev.A
Page 1 of 4
SGM0410S
Elektronische Bauelemente
2.2A , 100V , R
DS(ON)
310 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
-
Static Drain-Source On-Resistance
Gate Resistance
Total Gate Charge(10V)
Gate-Source Charge
Gate-Drain Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
2
Typ.
Max.
Unit
Teat Conditions
100
1
-
-
-
-
-
5.4
-
-
-
-
-
2
9.1
2
1.4
2
21.6
11.2
18.8
508
29
16.4
-
2.5
-
±100
1
V
V
S
nA
µA
V
GS
=0, I
D
= 250µA
V
DS
=V
GS
, I
D
=250µA
V
DS
=5V, I
D
=2A
V
GS
= ±20V
V
DS
=80V, V
GS
=0, T
J
=25°
C
V
DS
=80V, V
GS
=0, T
J
=55°
C
V
GS
=10V, I
D
=2A
5
310
m
320
-
-
-
-
-
-
nS
-
-
-
-
-
pF
nC
-
R
DS(ON)
-
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
-
V
GS
=4.5V, I
D
=1A
V
GS
= V
DS
=0, f =1.0MHz
I
D
=2A
V
DS
=50V
V
GS
=10V
V
DD
=50V
I
D
=2A
V
GS
=10V
R
G
=3.3
V
GS
=0
V
DS
=15V
f =1.0MHz
Source-Drain Diode
Diode Forward Voltage
2
1,4
V
SD
I
S
I
SM
T
rr
Q
rr
-
-
-
-
-
-
-
-
17.5
14
1.2
2.2
5.5
-
-
V
A
I
S
=1A, V
GS
=0
V
D
=V
G
=0, Force Current
Continuous Source Current
Pulsed Source Current
2,4
A
nS
nC
I
F
=2A, dl/dt=100A/µS,
T
J
=25°
C
Reverse Recovery Time
Reverse Recovery Charge
Note:
1.
2.
3.
4.
The data tested by surface mounted on a 1 inch2 FR-4 board with 2
OZ
copper.
The data tested by pulsed , pulse width
≦
300µs , duty cycle
≦
2%
The power dissipation is limited by 150° junc tion temperature.
C,
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Sep-2012 Rev.A
Page 2 of 4
SGM0410S
Elektronische Bauelemente
2.2A , 100V , R
DS(ON)
310 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Sep-2012 Rev.A
Page 3 of 4
SGM0410S
Elektronische Bauelemente
2.2A , 100V , R
DS(ON)
310 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Sep-2012 Rev.A
Page 4 of 4
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