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BTA208B-500E

产品描述Three quadrant triacs guaranteed commutation
产品类别半导体    分立半导体   
文件大小18KB,共4页
制造商Philips Semiconductors (NXP Semiconductors N.V.)
官网地址https://www.nxp.com/
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BTA208B-500E概述

Three quadrant triacs guaranteed commutation

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Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other
highly inductive loads. These devices
balance
the
requirements
of
commutation performance and gate
sensitivity. The "sensitive gate" E
series and "logic level" D series are
intended for interfacing with low power
drivers, including micro controllers.
BTA208B series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
MAX.
600D
600E
600F
600
8
65
MAX. UNIT
-
800E
800F
800
8
65
BTA208B-
500D
BTA208B-
500E
BTA208B-
500F
Repetitive peak off-state
500
voltages
RMS on-state current
8
Non-repetitive peak on-state 65
current
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
main terminal 1
main terminal 2
gate
main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2
1
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
102 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
8
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
65
71
21
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
September 1997
1
Rev 1.000

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