Standard SRAM, 1MX18, 3.8ns, CMOS, PQFP100
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| Objectid | 1235460380 |
| 包装说明 | QFP, QFP100,.63X.87 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 3.8 ns |
| 最大时钟频率 (fCLK) | 150 MHz |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PQFP-G100 |
| JESD-609代码 | e1 |
| 内存密度 | 18874368 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 18 |
| 湿度敏感等级 | 3 |
| 端子数量 | 100 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 1MX18 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | QFP |
| 封装等效代码 | QFP100,.63X.87 |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 2.5/3.3,3.3 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.03 A |
| 最小待机电流 | 3.14 V |
| 最大压摆率 | 0.4 mA |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | TIN SILVER COPPER |
| 端子形式 | GULL WING |
| 端子节距 | 0.635 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | 40 |
| K7A161800M-QL15 | K7A163600M-QC15T | K7A161800M-HC15T | K7A161800M-QC15T | K7A163600M-QC14T | K7A163600M-HC16T | K7A161800M-HC14T | K7A161800M-QC16T | K7A161800M-QL16 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 1MX18, 3.8ns, CMOS, PQFP100 | Standard SRAM, 512KX36, 3.8ns, CMOS, PQFP100 | Standard SRAM, 1MX18, 3.8ns, CMOS, PBGA119 | Standard SRAM, 1MX18, 3.8ns, CMOS, PQFP100 | Standard SRAM, 512KX36, 4ns, CMOS, PQFP100 | Standard SRAM, 512KX36, 3.5ns, CMOS, PBGA119 | Standard SRAM, 1MX18, 4ns, CMOS, PBGA119 | Standard SRAM, 1MX18, 3.5ns, CMOS, PQFP100 | Standard SRAM, 1MX18, 3.5ns, CMOS, PQFP100 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | BGA, BGA119,7X17,50 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknow | unknown | unknown |
| 最长访问时间 | 3.8 ns | 3.8 ns | 3.8 ns | 3.8 ns | 4 ns | 3.5 ns | 4 ns | 3.5 ns | 3.5 ns |
| 最大时钟频率 (fCLK) | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 138 MHz | 166 MHz | 138 MHz | 166 MHz | 166 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 | R-PQFP-G100 |
| JESD-609代码 | e1 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e1 |
| 内存密度 | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bi | 18874368 bit | 18874368 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 18 | 36 | 18 | 18 | 36 | 36 | 18 | 18 | 18 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 端子数量 | 100 | 100 | 119 | 100 | 100 | 119 | 119 | 100 | 100 |
| 字数 | 1048576 words | 524288 words | 1048576 words | 1048576 words | 524288 words | 524288 words | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 512000 | 1000000 | 1000000 | 512000 | 512000 | 1000000 | 1000000 | 1000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 1MX18 | 512KX36 | 1MX18 | 1MX18 | 512KX36 | 512KX36 | 1MX18 | 1MX18 | 1MX18 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | QFP | QFP | BGA | QFP | QFP | BGA | BGA | QFP | QFP |
| 封装等效代码 | QFP100,.63X.87 | QFP100,.63X.87 | BGA119,7X17,50 | QFP100,.63X.87 | QFP100,.63X.87 | BGA119,7X17,50 | BGA119,7X17,50 | QFP100,.63X.87 | QFP100,.63X.87 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLATPACK | FLATPACK | GRID ARRAY | FLATPACK | FLATPACK | GRID ARRAY | GRID ARRAY | FLATPACK | FLATPACK |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| 电源 | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
| 最小待机电流 | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V |
| 最大压摆率 | 0.4 mA | 0.4 mA | 0.4 mA | 0.4 mA | 0.38 mA | 0.42 mA | 0.38 mA | 0.42 mA | 0.42 mA |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | TIN SILVER COPPER | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN SILVER COPPER |
| 端子形式 | GULL WING | GULL WING | BALL | GULL WING | GULL WING | BALL | BALL | GULL WING | GULL WING |
| 端子节距 | 0.635 mm | 0.635 mm | 1.27 mm | 0.635 mm | 0.635 mm | 1.27 mm | 1.27 mm | 0.635 mm | 0.635 mm |
| 端子位置 | QUAD | QUAD | BOTTOM | QUAD | QUAD | BOTTOM | BOTTOM | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
| 厂商名称 | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | - | - |
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