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SBA-5089: 产品描述0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER; 产品类别热门应用无线/射频/通信; 文件大小504KB，共7页; 制造商RF Micro Devices (Qorvo)

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SBA-5089概述

0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

0 MHz - 5000 MHz 射频/微波宽带低功率放大器

SBA-5089规格参数

参数名称	属性值
最大工作温度	85 Cel
最小工作温度	-40 Cel
最大输入功率	17 dBm
最大工作频率	5000 MHz
最小工作频率	0.0 MHz
加工封装描述	ROHS COMPLIANT, SOT-89, 4 PIN
无铅	Yes
欧盟RoHS规范	Yes
状态	ACTIVE
结构	COMPONENT
端子涂层	NOT SPECIFIED
阻抗特性	50 ohm
微波射频类型	WIDE BAND LOW POWER

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SBA5089Z

DCto5GHz, CASCADABLE InGaP/GaAs HBT

MMIC AMPLIFIER

Package: SOT-89

Product Description

RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-

sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-

nology provides broadband performance up to 5GHz with excellent thermal

performance. The heterojunction increases breakdown voltage and minimizes leak-

age current between junctions. Cancellation of emitter junction non-linearities

results in higher suppression of intermodulation products. Only a single positive

supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke

are required for operation.

Optimum Technology

Matching® Applied

GaAs HBT

Gain & Return Loss

-10

-20

S11

S22

S21

Features



IP3=34.0dBm at 1950MHz

OUT

=13.0dBm at -45dBc

ACP IS-95 1950MHz

Robust 1000V ESD, Class 1C

Operates From Single Supply

Patented Thermal Design

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

Applications





GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

-40

Frequency (GHz)

IF Amplifier

Wireless Data, Satellite

Terminals

-30

Parameter

Small Signal Gain

Min.

18.5

16.5

Specification

Typ.

Max.

Unit

Condition

20.0

21.5

850MHz

18.0

19.5

1950MHz

Output Power at 1dB Compression

19.7

dBm

850MHz

18.0

19.5

dBm

1950MHz

Output Third Order Intercept Point

36.0

dBm

850MHz

32.0

34.0

dBm

1950MHz

Output Power

13.0

dBm

1950MHz, -45dBc ACP IS-95 9 Forward Channels

Bandwidth

4400

MHz

Return Loss >10dB

Input Return Loss

14.0

20.0

1950MHz

Output Return Loss

9.0

11.0

1950MHz

Noise Figure

4.5

5.5

1950MHz

Device Operating Voltage

4.7

4.9

5.3

Device Operating Current

Thermal Resistance (junction to lead)

°C/W

Test Conditions: V

=8V, I

=80mA Typ., OIP

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=39, T

=25°C, Z

=50

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS111204

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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SBA-5089相似产品对比

	SBA-5089	SBA-5089Z	SBA5089Z
描述	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
最大工作温度	85 Cel	85 Cel	85 Cel
最小工作温度	-40 Cel	-40 Cel	-40 Cel
最大输入功率	17 dBm	17 dBm	17 dBm
最大工作频率	5000 MHz	5000 MHz	5000 MHz
最小工作频率	0.0 MHz	0.0 MHz	0.0 MHz
加工封装描述	ROHS COMPLIANT, SOT-89, 4 PIN	ROHS COMPLIANT, SOT-89, 4 PIN	ROHS COMPLIANT, SOT-89, 4 PIN
无铅	Yes	Yes	Yes
欧盟RoHS规范	Yes	Yes	Yes
状态	ACTIVE	ACTIVE	ACTIVE
结构	COMPONENT	COMPONENT	COMPONENT
端子涂层	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
阻抗特性	50 ohm	50 ohm	50 ohm
微波射频类型	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER

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