NTP4804N
Power MOSFET
Features
30 V, 133 A, Single N−Channel, TO−220
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices*
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V
(BR)DSS
30 V
R
DS(on)
MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
I
D
MAX
133 A
Applications
•
AC–DC Converters
•
DC−DC Converters
•
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJC
Power Dissipation
RqJC
Pulsed Drain
Current
Current Limited by
Package
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C,
t
p
= 10
ms
T
A
= 25°C
Symbol
V
DSS
V
GS
I
D
P
D
I
D
P
D
I
DM
I
DmaxPkg
T
J
, T
STG
I
S
dV/dt
EAS
Value
30
±20
21
13
3.0
133
85
120
350
45
−55
to
+175
78
6
474
W
A
A
°C
A
V/ns
mJ
W
A
Unit
V
V
A
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
TO−220AB
CASE 221A
STYLE 5
1
NTP4804NG
AYWW
3
Source
2
Drain
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L(pk)
= 56 A, L = 0.3 mH, R
G
= 25
W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
2
1
Gate
3
T
L
260
°C
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2009
March, 2009
−
Rev. 0
1
Publication Order Number:
NTP4804N/D
NTP4804N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
1. Surface mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
Symbol
R
qJC
R
qJA
Value
1.25
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/
T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
R
G
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
tf
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
I
D
= 30 A
I
D
= 30 A
I
D
= 15 A
V
GS
= V
DS
, I
D
= 250
mA
1.5
6.9
3.3
4.4
4.4
22
4.0
5.5
5.5
TBD
mW
2.5
V
mV/°C
V
GS
= 0 V, V
DS
= 24 V
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V, I
D
= 250
mA
30
21
1.0
100
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±20
V
V
DS
= 15 V, I
D
= 15 A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
18
20
24
8.0
13
19.6
35.7
7.7
ns
ns
4160
938
455
28
3.4
11.3
11.1
0.49
W
40
nC
pF
2. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTP4804N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
T
a
T
b
Q
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms, I
S
= 30 A
V
GS
= 0 V, I
S
= 10 A
T
J
= 25
°C
T
J
= 150°C
0.77
0.57
34.4
18.9
15.5
29.5
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
2. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NTP4804NG
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
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3
NTP4804N
TYPICAL CHARACTERISTICS
250
225
I
D
, DRAIN CURRENT (A)
200
175
150
125
100
75
50
25
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0
0
1
3.5 V
T
J
= 25°C
4.0 V
10 V
V
GS
= 7, 6, 5.8, 5.5, 5.2, 5 V
240
4.5 V
I
D
, DRAIN CURRENT (A)
V
DS
≥
10 V
200
160
120
80
40
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
2
3
4
5
6
7
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0050
0.0048
0.0046
0.0044
0.0042
0.0040
0.0038
0.0036
0.0034
0.0030
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
Figure 2. Transfer Characteristics
I
D
= 30 A
T
J
= 25°C
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
0.002
0.001
0
15
35
55
75
95 115 135 155 175 195 215 235 255
I
D
, DRAIN CURRENT (A)
0.0032
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Drain Current
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
0
25
50
75
100
125
150
175
10
2
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 100°C
100
6
10
14
18
22
26
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTP4804N
TYPICAL CHARACTERISTICS
V
GS
= 0 V
T
J
= 25°C
C
iss
4000
3000
2000
C
oss
1000
0
10
C
rss
5
Vgs
0
5
10
Vds
15
20
25
30
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6000
5000
C, CAPACITANCE (pF)
10
QT
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
5
Q
gs
Q
gd
V
GS
10
0
I
D
= 30 A
T
J
= 25°C
0
5
10
15
20
25
0
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
10
60
50
40
30
20
10
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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5
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