电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RURH1510CC

产品描述15 A, 100 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小88KB,共3页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
下载文档 选型对比 全文预览

RURH1510CC概述

15 A, 100 V, SILICON, RECTIFIER DIODE

文档预览

下载PDF文档
^zmi-C-onauatoi iJ~^ioaucti.
r
Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MUR3010PT, RURH1510CC,
MUR3015PT, RURH1515CC,
MUR3020PT, RURH1520CC
15A, 100V - 200V Ultrafast Dual Diodes
Features
Ultrafast with Soft Recovery Characteristic
(t
RR
< 30ns)
• +175°C Rated Junction Temperature
• Reverse Voltage Up to 200V
• Avalanche Energy Rated
Package
JEDECTO-218AC
Applications
Switching Power Supply
• Power Switching Circuits
• General Purpose
CATHODE
(FLANGE)
ANODE1
CATHODE
ANODE2
Description
MUR3010PT, MUR3015PT, MUR3020PT and RURH1510CC,
RURH1515CC, RURH1520CC are ultrafast dual diodes
(t
RR
< 30ns) with soft recovery characteristics. They have a low
forward voltage drop and are of planar, silicon nitride passivated,
ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/ clamping
diodes and rectifiers in a variety of switching power supplies and
other power switching applications. Their low stored charge and
ultrafast recovery with soft recovery characteristics minimizes
ringing and electrical noise in many power switching circuits thus
reducing power loss in the switching transistor.
PACKAGING AVAILABILITY
PART NUMBER
MUR3010PT
RURH1510CC
MUR3015PT
RURH1515CC
MUR3020PT
RURH1520CC
PACKAGE
TO-218AC
TO-218AC
TO-218AC
TO-218AC
TO-218AC
TO-218AC
BRAND
MUR3010PT
RURH1510C
MUR3015PT
RURH1515C
MUR3020PT
RURH1520C
Symbol
M
A1
A2
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
T
c
= +25°c
MUR3010PT
RURH1510CC
MUR3015PT
RURH1515CC
150V
150V
150V
15A
30A
MUR3020PT
RUR1520CC
200V
200V
200V
15A
30A
200A
-55°Cto+175°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage. . . .
....
....
...
....
V
R
100V
100V
100V
15A
30A
200A
-55°Cto+175°C
Average Rectified Forward Current
(Total device forward current at rated V
R
and T
c
= 150°C)
Peak Forward Repetitive Current . . . .
(Rated V
R
, square wave 20kHz)
Nonrepetitive Peak Surge Current , . . .
(Surge applied at rated load condition halfwave 1 phase 60Hz)
Operating and Storage Temperature
200A
-55°Cto+175°C
Quality Semi-Conductors

RURH1510CC相似产品对比

RURH1510CC MUR3010PT MUR3015PT RURH1515CC RURH1520CC MUR3020PT
描述 15 A, 100 V, SILICON, RECTIFIER DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-247 15 A, 150 V, SILICON, RECTIFIER DIODE 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-218AC 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-218AC

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2039  329  1649  1048  2843  15  11  41  29  28 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved