PZUxDB2 series
Dual Zener diodes
Rev. 01 — 31 March 2008
Product data sheet
1. Product profile
1.1 General description
Dual isolated general-purpose Zener diodes in SOT353 (SC-88A) very small
Surface-Mounted Device (SMD) standard plastic and dark-green plastic packages.
1.2 Features
I
Non-repetitive peak reverse power
dissipation: P
ZSM
= 40 W
I
Total power dissipation: P
tot
≤
250 mW
I
Tolerance series:
B2: approximately
±2
%
I
Wide working voltage range:
nominal 2.7 V to 24 V
I
Dual isolated diodes configuration
I
Small standard plastic package suitable
for surface-mounted design
I
Small dark-green, halogen-free plastic
package suitable for surface-mounted
design
I
AEC-Q101 qualified
1.3 Applications
I
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
Per diode
V
F
P
ZSM
[1]
[2]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 100 mA
[1]
[2]
Min
-
-
Typ
-
-
Max
1.1
40
Unit
V
W
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
anode (diode 1)
not connected
anode (diode 2)
cathode (diode 2)
cathode (diode 1)
1
2
3
1
2
3
006aab219
Simplified outline
5
4
Graphic symbol
5
4
3. Ordering information
Table 3.
Ordering information
Package
Name
PZU2.7DB2 to
PZU24DB2
[1]
PZU2.7DB2/DG to
PZU24DB2/DG
[1][2]
[1]
[2]
The series consists of 25 types with nominal working voltages from 2.7 V to 24 V.
/DG: halogen-free plastic package
Type number
Description
plastic surface-mounted package; 5 leads
Version
SOT353
SC-88A
4. Marking
Table 4.
Marking codes
Marking code
[1]
T1*
T2*
T3*
T4*
T5*
T6*
T7*
T8*
T9*
TA*
TB*
TC*
TD*
TE*
Type number
[2]
PZU2.7DB2/DG
PZU3.0DB2/DG
PZU3.3DB2/DG
PZU3.6DB2/DG
PZU3.9DB2/DG
PZU4.3DB2/DG
PZU4.7DB2/DG
PZU5.1DB2/DG
PZU5.6DB2/DG
PZU6.2DB2/DG
PZU6.8DB2/DG
PZU7.5DB2/DG
PZU8.2DB2/DG
PZU9.1DB2/DG
Marking code
[1]
U1*
U2*
U3*
U4*
U5*
U6*
U7*
U8*
U9*
UA*
UB*
UC*
UD*
UE*
Type number
PZU2.7DB2
PZU3.0DB2
PZU3.3DB2
PZU3.6DB2
PZU3.9DB2
PZU4.3DB2
PZU4.7DB2
PZU5.1DB2
PZU5.6DB2
PZU6.2DB2
PZU6.8DB2
PZU7.5DB2
PZU8.2DB2
PZU9.1DB2
PZUXDB2_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2008
2 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
Marking codes
…continued
Marking code
[1]
TF*
TG*
TH*
TK*
TL*
TM*
TN*
TP*
TR*
TS*
TT*
Type number
[2]
PZU10DB2/DG
PZU11DB2/DG
PZU12DB2/DG
PZU13DB2/DG
PZU14DB2/DG
PZU15DB2/DG
PZU16DB2/DG
PZU18DB2/DG
PZU20DB2/DG
PZU22DB2/DG
PZU24DB2/DG
Marking code
[1]
UF*
UG*
UH*
UK*
UL*
UM*
UN*
UP*
UR*
US*
UT*
Table 4.
PZU10DB2
PZU11DB2
PZU12DB2
PZU13DB2
PZU14DB2
PZU15DB2
PZU16DB2
PZU18DB2
PZU20DB2
PZU22DB2
PZU24DB2
[1]
Type number
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
/DG: halogen-free plastic package
[2]
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
I
F
I
ZSM
P
ZSM
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
forward current
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
[1]
Max
200
see
Table 8
40
Unit
mA
-
-
[1]
W
T
amb
≤
25
°C
[2]
[3]
-
-
-
−55
−65
250
275
150
+150
+150
mW
mW
°C
°C
°C
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
PZUXDB2_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2008
3 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
6. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
500
455
200
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering points at pin 4 and pin 5.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 10 mA
I
F
= 100 mA
[1]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
0.9
1.1
V
V
Table 8.
Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG
T
j
= 25
°
C unless otherwise specified.
PZUxDB2
Working
PZUxDB2/DG voltage
V
Z
(V)
I
Z
= 5 mA
Min
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
PZUXDB2_SER_1
Differential resistance Reverse
current
r (Ω)
dif
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
I
R
(µA)
I
Z
= 0.5 mA I
Z
= 5 mA
Max
1000
1000
1000
1000
1000
1000
800
250
100
80
60
60
Max
100
95
95
90
90
90
80
60
40
30
20
10
Max
20
10
5
5
3
3
2
2
1
0.5
0.5
0.5
V
R
(V)
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)
[1]
d
I
ZSM
(A)
[2]
Max
2.9
3.2
3.5
3.8
4.1
4.34
4.75
5.2
5.73
6.33
6.93
7.6
Typ
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
0.3
1.9
2.7
3.4
4.0
Max
440
425
410
390
370
350
325
300
275
250
215
170
Max
8
8
8
8
8
8
8
5.5
5.5
5.5
5.5
3.5
© NXP B.V. 2008. All rights reserved.
2.65
2.95
3.25
3.55
3.87
4.15
4.55
4.98
5.49
6.06
6.65
7.28
Product data sheet
Rev. 01 — 31 March 2008
4 of 12
NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
Table 8.
Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG
…continued
T
j
= 25
°
C unless otherwise specified.
PZUxDB2
Working
PZUxDB2/DG voltage
V
Z
(V)
I
Z
= 5 mA
Min
8.2
9.1
10
11
12
13
14
15
16
18
20
22
24
[1]
[2]
Differential resistance Reverse
current
r (Ω)
dif
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
I
R
(µA)
I
Z
= 0.5 mA I
Z
= 5 mA
Max
60
60
60
60
80
80
80
80
80
80
100
100
120
Max
10
10
10
10
10
10
10
15
20
20
20
25
30
Max
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V)
5
6
7
8
9
10
11
11
12
13
15
17
19
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)
[1]
d
I
ZSM
(A)
[2]
Max
8.36
9.23
10.21
11.22
12.24
13.49
14.3
14.98
16.51
18.35
20.39
22.47
24.78
Typ
4.6
5.5
6.4
7.4
8.4
9.4
10.4
11.4
12.4
14.4
16.4
18.4
20.4
Max
150
120
110
108
105
103
101
99
97
93
88
84
80
Max
3.5
3.5
3.5
3
3
2.5
2
2
1.5
1.5
1.5
1.3
1.3
8.02
8.85
9.77
10.76
11.74
12.91
13.7
14.34
15.85
17.56
19.52
21.54
23.72
f = 1 MHz; V
R
= 0 V
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
PZUXDB2_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 31 March 2008
5 of 12
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