Product Specification
www.jmnic.com
Silicon Power Transistors
2SC3979
DESCRIPTION
・With
TO-220Fa package
・High
breakdown voltage
・High
speed switching
・Wide
area of safe operation (SOA)
・Full-pack
package which can be installed
to the heak sink with one screw
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
emitter
Fig.1 simplified outline (TO-220Fa) and symbol
・
ABSOLUTE MAXIMUM RATINGS AT Tc=25
℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
T
a
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
900
800
7
3
5
1
40
2
150
-55~150
UNIT
V
V
V
A
A
A
W
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA , I
B
=0
I
C
=0.8A I
B
=0.16A
I
C
=0.8A I
B
=0.16A
V
CB
=900V I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=0.8A ; V
CE
=5V
I
C
=0.15A ; V
CE
=5V
8
6
10
MIN
800
TYP.
2SC3979
MAX
UNIT
V
1.5
1.5
50
50
V
V
μA
μA
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=0.8A ;I
B1
=0.8A
I
B2
=-0.32A
V
CC
=250V
0.7
2.5
0.3
μs
μs
μs
JMnic
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