JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220Fa package
・High
speed switching
・High
V
CBO
・Wide
area of safe operation
APPLICATIONS
・For
high breakdown voltate ,high-speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
2SC3972 2SC3972A
・
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
2SC3972
V
CBO
Collector-base voltage
2SC3972A
V
CEO
V
EBO
I
C
I
CM
I
B
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
Open base
Open collector
Open emitter
900
500
8
5
10
3
40
W
V
V
A
A
A
CONDITIONS
VALUE
800
V
UNIT
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SC3972
I
CBO
Collector
cut-off current
2SC3972A
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
V
CB
=900V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=2A ; V
CE
=5V
CONDITIONS
I
C
=10mA , I
B
=0
I
C
=2A; I
B
=0.4A
I
C
=2A; I
B
=0.4A
V
CB
=800V; I
E
=0
2SC3972 2SC3972A
MIN
500
TYP.
MAX
UNIT
V
1.0
1.5
V
V
0.1
mA
0.1
15
8
20
mA
I
C
=0.5A ; V
CE
=10V;f=1MHz
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=2A; I
B1
=0.4A
I
B2
=-0.8A;V
CC
=200V
1.0
3.0
0.3
μs
μs
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3972 2SC3972A
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3972 2SC3972A
4
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