NSS40200L, NSV40200L
40 V, 2.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
www.onsemi.com
−40 VOLTS
2.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
80 mW
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MARKING DIAGRAM
VA M
G
G
1
VA = Specific Device Code*
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary
depending upon manufacturing location.
This is a representation only and actual
devices may not match this drawing exactly.
ORDERING INFORMATION
Device
NSS40200LT1G
NSV40200LT1G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
Shipping
†
SOT−23 3,000 / Tape & Reel
(Pb−Free)
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS40200L/D
©
Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 7
NSS40200L, NSV40200L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −0.1 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= −40 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= −7.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= −10 mA, V
CE
= −2.0 V)
(I
C
= −500 mA, V
CE
= −2.0 V)
(I
C
= −1.0 A, V
CE
= −2.0 V)
(I
C
= −2.0 A, V
CE
= −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(I
C
= −0.1 A, I
B
= −0.010 A) (Note 5)
(I
C
= −1.0 A, I
B
= −0.100 A)
(I
C
= −1.0 A, I
B
= −0.010 A)
(I
C
= −2.0 A, I
B
= −0.200 A)
Base −Emitter Saturation Voltage (Note 4)
(I
C
= −1.0 A, I
B
= −0.01 A)
Base −Emitter Turn−on Voltage (Note 4)
(I
C
= −1.0 A, V
CE
= −2.0 V)
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz)
Output Capacitance (V
CB
= 3.0 V, f = 1.0 MHz)
h
FE
250
220
180
150
V
CE(sat)
−
−
−
−
V
BE(sat)
−
V
BE(on)
−
f
T
100
Cibo
Cobo
−
−
−
−
−
−
325
62
pF
pF
−
−0.900
MHz
−
−0.900
V
−0.010
−0.080
−0.135
−0.135
−0.017
−0.095
−0.170
−0.170
V
−
300
−
−
−
−
−
−
V
V
(BR)CEO
−40
V
(BR)CBO
−40
V
(BR)EBO
−7.0
I
CBO
−
I
EBO
−
−
−0.1
−
−0.1
mAdc
−
−
mAdc
−
−
Vdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
Delay (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA)
Rise (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA)
Storage (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA)
Fall (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
t
r
t
s
t
f
−
−
−
−
−
−
−
−
60
120
400
130
ns
ns
ns
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
5. Guaranteed by design but not tested.
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3
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