Philips Semiconductors
Product specification
Thyristors
sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
switching
and
phase
control
applications.
BTA151 series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BTA151-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500R
500
7.5
12
100
650R
650
7.5
12
100
800R
800
7.5
12
100
V
A
A
A
PINNING - SOT82
PIN
1
2
3
tab
DESCRIPTION
cathode
anode
gate
anode
PIN CONFIGURATION
SYMBOL
a
k
1
2
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave; T
mb
≤
109 ˚C
all conduction angles
half sine wave; T
j
= 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -650R -800R
500
1
650
1
800
7.5
12
100
110
50
50
2
5
12
5
0.5
150
125
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
sensitive gate
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
BTA151 series
TYP.
-
60
MAX.
1.3
-
UNIT
K/W
K/W
Thermal resistance
junction to mounting base
Thermal resistance
in free air
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
I
L
I
H
V
T
V
GT
I
D
, I
R
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 23 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C
MIN.
-
-
-
-
-
0.25
-
TYP.
2
10
7
1.4
0.6
0.4
0.1
MAX.
4
40
16
1.75
1.5
-
0.5
UNIT
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform
Gate open circuit
R
GK
= 100
Ω
I
TM
= 40 A; V
D
= V
DRM
; I
G
= 0.1 A;
dI
G
/dt = 5 A/µs
V
D
= 67% V
DRM(max)
; I
TM
= 20 A; V
R
= 25 V;
dI
TM
/dt = 30 A/µs; dV
D
/dt = 50 V/µs;
R
GK
= 100
Ω
MIN.
TYP.
MAX.
UNIT
t
gt
t
q
50
200
-
-
130
1000
2
70
-
-
-
-
V/µs
V/µs
µs
µs
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
15
Ptot / W
conduction
angle
degrees
30
60
90
120
180
form
factor
BT151
a
4
2.8
2.2
1.9
1.57
Tmb(max) / C
a = 1.57
2.2
1.9
105.5
120
100
ITSM / A
BT151
IT
ITSM
10
2.8
4
112
80
60
time
T
Tj initial = 25 C max
5
118.5
40
20
0
0
1
2
3
4
5
IT(AV) / A
6
7
125
8
0
1
10
100
Number of half cycles at 50Hz
1000
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
BT151
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
ITSM / A
25
IT(RMS) / A
BT151
20
dI
T
/dt limit
100
15
10
IT
T
I TSM
time
5
Tj initial = 25 C max
10
10us
100us
T/s
1ms
10ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
109˚C.
VGT(Tj)
VGT(25 C)
15
IT(RMS) / A
BT151
1.6
109 C
BT151
1.4
1.2
1
10
5
0.8
0.6
0
-50
0
50
Tmb / C
100
150
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
3
2.5
2
1.5
1
0.5
IGT(Tj)
IGT(25 C)
BT151
30
25
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.06 V
Rs = 0.0304 ohms
BT151
20
15
10
5
0
typ
max
0
-50
0
50
Tj / C
100
150
0
0.5
1
VT / V
1.5
2
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
BT145
10
Zth j-mb (K/W)
BT151
1
0.1
P
D
tp
0.01
0.5
0
-50
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25 C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dVD/dt (V/us)
3
2.5
BT151
10000
1000
2
RGK = 100 Ohms
1.5
1
0.5
0
-50
10
100
gate open circuit
0
50
Tj / C
100
150
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
sensitive gate
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
BTA151 series
mounting
base
2.8
2.3
7.8
max
3.75
3.1
2.5
11.1
max
1)
2.54
max
1.2
15.3
min
1
4.58
0.5
2
3
2.29
1) Lead dimensions within this
zone uncontrolled.
0.88
max
Fig.13. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
嵌入式系统
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