NDF60N550U1,
NDD60N550U1
Product Preview
N-Channel Power MOSFET
600 V, 550 mW
Features
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V
(BR)DSS
600 V
R
DS(ON)
MAX
550 mW @ 10 V
•
100% Avalanche Tested
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise
noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Drain
Current
R
qJC
(Note 1)
Power
Dissipation –
R
qJC
Pulsed Drain
Current
Steady
State
T
C
=
25°C
T
C
=
100°C
Steady
State
T
C
=
25°C
P
D
Symbol
V
DSS
V
GS
I
D
9.5
6
28
NDF
600
±25
8.5
5.4
96
W
NDD
Unit
V
V
A
N−Channel MOSFET
D (2)
G (1)
S (3)
4
t
p
= 10
ms
I
DM
T
J
,
T
STG
I
S
EAS
T
L
38
34
A
°C
A
mJ
°C
1 2
3
TO−220FP
CASE 221AH
1
2
1
2
3
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source
Avalanche Energy
Lead Temperature for Soldering
Leads
−55
to +150
9.5
TBD
260
8.5
IPAK
CASE 369D
4
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
DPAK
CASE 369AA
MARKING AND ORDERING INFORMATION
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
NDF60N550U1
NDD60N550U1
Symbol
R
qJC
R
qJA
Value
4.4
1.3
50
33
96
Unit
°C/W
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Junction−to−Ambient Steady State
NDF60N550U1
NDD60N550U1
NDD60N550U1−1
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2012
October, 2012
−
Rev. P1
1
Publication Order Number:
NDF60N550U1/D
NDF60N550U1, NDD60N550U1
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Static Drain-to-Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Plateau Voltage
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
V
GP
R
g
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
t
a
t
b
Q
rr
V
GS
= 0 V, V
DD
= 30 V
I
S
= 9.5 A, d
i
/d
t
= 100 A/ms
T
J
= 25°C
T
J
= 100°C
V
DD
= 300 V, I
D
= 9.5 A,
V
GS
= 10 V, R
G
= 0
W
V
DS
= 300 V, I
D
= 9.5 A, V
GS
= 10 V
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
540
45
1
20
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
nC
ns
1.6
V
V
W
ns
nC
pF
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 50
mA
Reference to 25°C, I
D
= 50
mA
V
GS
= 10 V, I
D
= 4.8 A
V
DS
= 15 V, I
D
= 4.8 A
2
TBD
TBD
530
TBD
550
4
V
mV/°C
mW
S
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±20
V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 1 mA
600
TBD
1
50
±100
nA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
RESISTIVE SWITCHING CHARACTERISTICS
(Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
I
S
= 9.5 A, V
GS
= 0 V
2. Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NDF60N550U1, NDD60N550U1
MARKING DIAGRAMS
4
Drain
YWW
XX
XXXG
4
Drain
YWW
XX
XXXG
XXXXXXXXG
AYWW
Gate
Source
1 2 3
Gate Drain Source
IPAK
A
Y
WW
G
2
Drain 3
1
Gate Source
DPAK
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Drain
TO−220FP
ORDERING INFORMATION
Device
NDF60N550U1G
NDD60N550U1−1G
NDD60N550U1T4G
Package
TO−220FP
(Pb-Free, Halogen-Free)
IPAK
(Pb-Free, Halogen-Free)
DPAK
(Pb-Free, Halogen-Free)
Shipping
†
50 Units / Rail
75 Units / Rail
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NDF60N550U1, NDD60N550U1
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.70
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.70
7.10
12.70
14.73
---
2.80
3.00
3.40
2.80
3.20
E
E/2
A
P
0.14
M
B
H1
A
A1
SEATING
PLANE
B A
M
Q
1 2 3
D
C
NOTE 3
L
L1
b
0.25
M
3X
3X
c
B A
M
b2
e
C
A2
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4
NDF60N550U1, NDD60N550U1
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
B
V
R
4
C
E
Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
S
−T−
SEATING
PLANE
A
1
2
3
K
F
D
G
3 PL
J
H
M
0.13 (0.005)
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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5
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