MUR880E
®
Pb Free Plating Product
MUR880E
Pb
8 Ampere,800 Volt Epitaxial Type Ultra Fast Recovery Rectifier Diode
TO-220AC
Unit: mm
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Mechanical Data
Case: TO-220C-2P Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 2.05 gram approximately
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
2
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@8A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=25
@ T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJC
T
J
T
STG
MUR880E
800
560
800
8
100
1.8
5
100
40
50
1.5
- 55 to + 150
- 55 to + 150
Units
V
V
V
A
A
V
uA
nS
pF
/W
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Rev.05
©
2006
Thinki Semiconductor
Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
MUR880E
®
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
12
1000
Average Forward Rectified Current (A)
Instantaneous Reverse Leakage
Current (μA)
Resistive or Inductive Load
10
T
J
= 150 °C
100
T
J
= 125 °C
T
J
= 100 °C
10
8
6
4
2
T
J
= 25 °C
5
0
0
25
50
75
100
125
150
0.01
0
20
40
60
80
100
Case Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
150
100
T
L
= 75 °C
8.3 ms Single Half Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Peak Forward Surge Current (A)
100
75
50
25
Junction Capacitance (pF)
10
100
125
0
1
10
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Junction Capacitance
100
Instantaneous Forward Current (A)
10
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
1
T
J
= 125 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Rev.05
©
2006
Thinki Semiconductor
Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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