'Istieu
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ZPioaucti, Una.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large-signal, common emitter, class-AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800-970 MHz.
• Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Minimum Gain = 10 dB @ 900 MHz, class-AB
Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion -30 dBc @ 30 Watts (PEP)
•
Characterized with Series Equivalent Large-Signal Parameters from 800
to 960 MHz
100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
MRF897
SOW, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
• Silicon Nitride Passivated
•
• Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal-
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE395B-01,
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 50 mAdc, IB = 0)
Collector-Emitter Breakdown Voltage (Ic = 50 mAdc, VBE
=
°)
Emitter-Base Breakdown Voltage (IE = 5 mAdc, Ic = 0)
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain (ICE = 1 -0 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 24 Vdc, I
E
= 0, f = 1.0 MHz)
Cob
14
21
28
PF
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
!
CES
Symbol
Value
30
60
4.0
4.0
105
0.60
-65 to +150
Max
1.67
Unit
Vdc
Vdc
Vdc
Adc
VCEO
V
CES
V
EBO
ic
PD
T
stg
Watts
W/°C
°c
Unit
°C/W
Symbol
RSJC
Symbol
Min
Typ
Max
—
—
—
10.0
Unit
30
60
4.0
—
30
33
80
4.7
—
80
Vdc
Vdc
Vdc
mAdc
hFE
120
—
(continued)
Onolllv
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
FUNCTIONAL CHARACTERISTICS
Common-Emitter Amplifier Power Gain
(V
CC
= 24 Vdc, P
out
= 30 Watts (PEP), l
cq
= 125 mA, f-| = 900 MHz,
f2 = 900.1 MHz)
Collector Efficiency
(V
CC
= 24 Vdc, P
ou
t = 30 Watts (PEP), l
cq
= 125 mA, f-j = 900 MHz,
f
2
= 900.1 MHz)
Interrnodulation Distortion
(V
CC
= 24 Vdc, P
out
= 30 Watts (PEP), l
cq
= 125 mA, f-| = 900 MHz,
f
2
= 900.1 MHz)
Output Mismatch Stress
(Vcc = 26 Vdc, P
out
= 30 Watts (PEP), l
cq
= 125 mA, f-| = 900 MHz,
f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles))
G
pe
Symbol
|
Min
Typ
|
Max
Unit
|
10.0
12.0
"
dB
n
IMD
35
38
%
-37
-30
dBc
V
No Degradation in Output Power
Before and After Test
OV
C
c
VBB
R2
-OVcc
B1, B2, B3, B4 — Ferrite Bead, Fair Rite #2743019447
C1 — 0.8-8.0 pF Trimmer Capacitor, Johanson
C2, C3, C23, C24 — 43 pF, 100 mil, ATC Chip Capacitor
C4, C5, C18, C19, C21, C22 — 820 pF, 100 mil, Chip Capacitor, Kemet
C6, C7, C11, C12 — 10 nF, Lytic Capacitor, Panasonic
C8, C9, C16, C17 — 100 pF, 100 mil, Chip Capacitor, Murata Erie
C10 — 13 pF, 50 mil, ATC Chip Capacitor
C13, C14 — 250 HF Lytic Capacitor, Mallory
C15 — 1.1 pF, 50 mil, ATC Chip Capacitor
C20 — 6.8 pF, 100 mil, ATC Chip Capacitor
L1, L2, L3, L4, L5, L6 — 5 Turns 20 AWG, IDIA 0.126" choke
N1, N2 — Type N Flange Mount, Omni Spectra 3052-1648-10
Q1 — Bias Transistor BD136 PNP
R1.R12 — 39 Ohm, 2.0 W
R3, R4, R5, R6 — 4.0 x 39 Ohm, 1/8 W, Chips in Parallel,
Rohm 390-J
TL1-TL11 —See Photomaster
Balunl, Balun2, Coax 1, Coax 2 — 2.20" 50 Ohm, 0.088" o.d.
semi-rigid coax, Micro Coax
UT-85-M17
Board — 1/32" Glass Teflon, Arlon GX-0300-55-22, e
r
= 2.55
Figure 1. MRF897 Broadband Test Circuit
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
