, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MRF497
The RF Line
40 W
BO MHz
NPN
SILICON RF
POWER
TRANSISTOR
, , , designed for 12.5 volt VHP large-signal power amplifier appli-
cations in commercial and industrial equipment, operating in the
25 to 50 MHz frequency range.
• Low-Cost, Common-Emitter TQ-22GAB Package
• Specified 12.5 V, 50 MHz Performance —
Output Power = 40 Watts
Power Gam = 10 dB Min
Efficiency = 60% Min
• Load Mismatch Capability at Rated Voltage and RF Drive
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector -Base Voltage
Eminer-Base Voltage
Collector-Current — Continuous
Total Device Dissipation
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case {2)
Symbol
RBJC
2
Symbol
Unit
4
o
Wans
mW/°C
"C
60
" 25°C |1)
PD
87 S
05
65
to
*t
50
o
STYLi I
PlWI
BAK
J EWTTlfl
[DThis device is designed for RF operation The total device dissipation rating appli«
only whan the device is operated
as
an RF amplifier
12) Thermal Resistance if delermned under specified RF operating conditions by nfr
rtieasufem«nt techniques
O —M
--
i coufCTW
lEMTTER
1 &i
FIGURE 1 — 50 MHz TEST CIRCUIT
C1 — A r e a 469
C2 C3 — AfCO 466
CS—
100 M* 'SVdc Eltctro'ytic
viifM -SC
1 CtWTIIOLLING
WMCNSCN
IhtCH
3
OH I
DEFINES 4 fflNt WWH
AIL
Lf AC
flWCdUUllTf
S ME tUOV*
«* |
m
: MM ;
mt
n«j
: UTS ! oTw
inujiyTni_
**HO
o^l
«T1
C6 - ft 001 *iF OK Carafe
m — iflfl
i 0 Wan f»«p«or
L1
— 3 Tumi #U AWG Wir* I V ID
12
— 1 1 2 Turn* #14 AWO Wir» 1 2
L3 — U Turns f 1fi AWG Wire 1 4' 10
CZ^
LI
JM;
101 | Din
am
-- '
t±
IM
,.^ '»t, WJ.1I&.
Hi pa f ii
T,m
ii
RFC2 - 3 Ftrromib* •M-9t04$ 38 BW4* on i»H AWG
m l JB | aw I «»_
i "i I - I '-mt^.T-|
i - I m l - i«• I
CASE 221A-04
TO-220AB
S — Firroxcub* »M-*K
65/36
Board MIMN* — Epov F»b»»fllm 0 0*J' ihtck
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to Be both accurate and reliable at the time of going
to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
(T
c
-• 25"C unlMt otherwise nolM)
Characterietic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(!<; = lOOmAdc, IB =0)
Collector-Emitter Breakdown Voltage
II
C
= 20 mAdc, Vag - 0|
Emitter-Base Breakdown Voltage
H
E
s 10 mAdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
* 1 0
Adc.
VCE • 5 0
Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
IV
C
B = IS Vdc. IE i 0. 1 - 1 0 MHzl
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain
(
V
CC = ' '
5
V*
5
-
p
out = 40 W, f = 50 MHz)
Collector Efficiency
(VCC " ' 2
6
vac
-
p
out - 40 W. f = 50 MHil
Qp
E
i)
10
60
Cob
-
-
25O
OF
"FE
20
-
-
—
V
(BR)CEO
|
Symbol
|
Mlii
18
36
40
Typ
-
—
—
-
—
-
Vdc
Vdc
Vdc
PRICES
v
(BR)g80
11 2
—
—
—
dB
%
FIGURE 2 - POWER GAIN viriui FREOUiNCY
20
13
8 "
^_^
1 "
FIGURE 3 - OUTPUT POWER »run INPUT POWER
••»
--^
"•"»,
3
16
CE
j,
U
«
CC
-125V
'out'""
~^>
^
12
11
10
2
0
25
t
JO
35
1. FREQUENCY (MH;)
'
•s^
^
"V k^
^
40
45
SO
FIGURE 4 - OUTPUT POWER «/iui SUPPLY VOLTAGE
SOMHi
SO
10
12
V
CC
SUPPIYVOLTACEIVOITSI
单片机
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