na.
,U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MRF323
Designed primarily for wideband large-signal driver and predriver
amplifier stages in the 200-500 MHz frequency range.
•
Guaranteed performance at 400 MHz, 28 V
Output power = 20 W
Power gain = 10 dB min.
Efficiency = 50% min.
100% tested for load mismatch at all phase angles with 30:1 VSWR
Gold metallization system for high reliability
Computer-controlled wirebonding gives consistent input impedance
Product Image
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•
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
— Peak
Total Device Dissipation @ T
c
= 25"C (I )
Derate above 25°C
Storage Temperature Range
Symbol
Value
33
60
4.0
2.2
3.0
55
310
-65to-i-150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/'C
;
C
CASE 244-04,
VCEO
VCBO
VEBO
'c
PD
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS <T
C
= 26°C unless otherwise noted )
Characteristic
Symbol
Min
Typ
Max
Unit
Symbol
Rejc
Max
3.2
Unit
=C/W
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(l
c
= 20 mAdc, I
B
= 0)
Collector-Emitter Breakdown Voltage
(lc = 20 mAdc, VBE = 0)
Collector-Base Breakdown Voltage
(l
c
= 20 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(I
E
= 2.0 mAdc. l
c
= 0)
Collector Cutoff Current
(V
CB
= 30Vdc, I
E
= 0)
V
(BR)CEO
33
60
60
4.0
—
—
—
—
—
—
—
—
—
—
2.0
Vdc
Vdc
Vdc
Vdc
mAdc
V
(BR)CES
V
!BR)CBO
V
!BR)EBO
ICBO
ON CHARACTERISTICS
DC Current Gain
(l
c
= 1.0Adc,VcE = S.O Vdc)
HFE
20
—
80
—
NOTE
(continued)
1. This device is designed for RF operation. The total device dissipation rating apptes only when the device PS operated as an RF amplifier.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
r l i i^llllAv*
MRF323
ELECTRICAL CHARACTERISTICS — continued (T
c
= 25 C unless otherwise noted )
Characteristic
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
C
B = 28 Vdc, IE = 0, f = 1.0MHz)
FUNCTIONAL TESTS (Figure I }
Common-Emitter Amplifier Power Gain
(V
cc
= 28 Vdc, P^ = 20 W, f = 400 MHz)
Collector Efficiency
(V
cc
= 28 Vdc, P^t = 20 W, f = 400 MHz)
Load Mismatch
(V
cc
= 28 Vdc, P^ = 20 W, f = 400 MHz,
VSWR = 30:1 all phase angles)
GPE
10
50
11
60
—
—
dB
%
Cob
—
Symbol
Win
Typ
Max
Unit
20
24
P
F
n
M'
No Degradation in Output Power
RF OUTPUT
RF INPUT;> Q
C1, C2, C6— 1.0-20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C8 — 0 1 jiF Erie Redcap
C7 — 0.5-10 pF Johanson Trimmer (JMC 5201)
C9, CIO — 680 pF Feedthru
C11 — 1.0 uF 50 Volt Tantalum
C12 — 0.018 uF Vitramon Chip Capacitor
LI — 0 33 nH Molded Choke with Ferroxcube Bead
(Ferroxcube 56-590-65/4B) on Ground End
L2 — 6 Turns #20 Enamel, 1/4" ID, Closewound
L3 — 4 Turns #20 Enamel,
MB"
ID. Closewound
L4 — Ferroxcube VK200-19/4B
R1 — 5.1 Q 1/4 Watt
21 — Microstrip 0 1" W x 1.35" L
22 — Microstrip 01" W x 0.55" L
23 — Microstrip 0.1" W x 0.8" L
Z4 — Microslrip 0.1" W x 1.75" L
Board — Glass Teflon
e, =
2.56, t = 0.062"
Input/Output Connectors — Type N
Figure 1. 400 MHz Test Circuit Schematic
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