^s.mi'Con.dacto'i ^P
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
The RF MOSFET Line
RF Power
Field Effect Transistors
N-Channel Enhancement Mode MOSFETs
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high-power, high-gain and broadband performance of
these devices make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
• Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB(13dBTyp)
Efficiency = 55% Min. (60% Typ) .
• Low Thermal Resistance
•
•
•
•
Ruggedness Tested at Rated Output Power
Nitride 'Passivated Die for Enhanced Reliability
Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
Excellent Thermal Stability; Suited for Class A Operation
MRF173
MRF173CQ
80 W, 28 V, 175 MHz
N-CHANNEL
BROADBAND
RF POWER MOSFETs
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Drain Current — Continuous
Total Device Dissipation ® TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
(T
c
=
25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VDS = 0 V, VQS = 0 V) I
D
= 50 mA
Zero Gate Voltage Drain Current (V
D
s = 28 V, V
QS
= 0 V)
Gate-Source Leakage Current (VGS «= 40 V, VDS = 0 V)
ON CHARACTERISTICS
Gate Threshold Voltage (V
DS
* 10 V, I
D
= 50 mA)
Drain-Source On-Voltage (V
DS
(
0n
), V
GS
= 10 V, I
D
= 3.0 A)
Forward Transconductance (VDS = 10 V, Irj = 2.0 A)
V
GS(th)
V
DS(on)
V
(BR)DSS
CASE 211-11, STYLE 2
(MRF173)
Symbol
VDSS
VDGO
Value
65
65
±40
9.0
220
1.26
-65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
VGS
ID
PD
T
s
tg
Watts
W/"C
°C
°C
CASE 316-01,
(MRF173CQ)
Tj
Symbol
RWC
Max
0.8
Unit
°c/w
Max
Symbol
Mln
Typ
Unit
IDSS
IGSS
65
—
-
1.0
—
1.8
—
—
-
3.0
—
2.2
—
2.0
1.0
V
mA
liA
6.0
1.4
—
V
V
9fs
mhos
(continued)
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Quality Semi-Conductors
Cs
!/
, O
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ELECTRICAL CHARACTERISTICS — continued (T
c
= 25°C unless otherwise noted)
Characteristic
DYNAMIC CHARACTERISTICS
Input Capacitance (V
DS
= 28 V, V
GS
= 0 V, f = 1 .0 MHz)
Output Capacitance (V
D
s = 28 V, VQS = 0 V, f = 1 .0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, V
GS
= o V, f = 1 .0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure (V
DD
= 28 V, f = 150 MHz, I
D
Q = 50 mA)
Common Source Power Gain
(V
DD
= 28 V,
P
ou
,
= 80 W, f = 1 50
MHz,
IDQ = 50 mA)
Drain Efficiency (V
DD
= 28 V, P
ou
, = 80 W, f = 1 50 MHz, I
DQ
= 50 mA)
Electrical Ruggedness
(V
OD
= 28 V, P
oul
= 80 W. f = 1 50 MHz, I
DQ
= 50 mA)
Load VSWR 30: 1 at all phase angles
Series Equivalent Input Impedance
(V
D
D
= 28 V,
P
ou
,
= 80 W, f = 1 50
MHz,
IDQ = 50 mA)
Series Equivalent Output Impedance
(V
DD
=
28
V.
p
oul = 80 W, f = 1 50 MHz, I
DQ
= 50 mA)
Series Equivalent Input Impedance
(V
DD
= 28 V, P
oul
= 80 W, f = 150 MHz, I
DQ
= 50 mA)
Series Equivalent Output Impedance
(V
DD
= 28 V,
P
ou
,
= 80 W, f = 1 50
MHz,
IDQ = 50 mA)
MRF173
MRF173
MRF173CQ
MRF173CQ
NF
Gps
Cjss
Symbol
Mln
Typ
Max
Unit
c
oss
Cess
-
—
-
-
11
55
110
105
10
—
-
—
pF
PF
pF
1.5
13
60
-
—
-
dB
dB
%
n
V
No Degradation in Output Power
Zin
—
—
—
—
2.99-J4.5
2.68-J1.3
1.35-J5.15
2.72-J149
—
—
—
—
Ohms
Ohms
Ohms
Ohms
Zoui
Zin
Zout
DD = « V
R1
^t
CR
^t 09
i
q^C10
I
I T
—
" T ±L
—
—
?pC13q^C1
1.
—
RFC2 >
D.U.T.
S
—
RF
A™
If
.
rr\
L1
~
*"
R3'
L2
C 1 1
4
r*~
v
d
r
RF
OUTPUT
f^^\n
J^N
1C
INPUT
Cl
(ft-
( 1
•
•*!
•
)
•
• • •
C 1 2
fM-L
*
J^M
c15
r.fi-L
C1, C15 —470pFUnelco
C2, C3, C5 — 9-180 pF, Arco 463
C4, C6 — 15pF, Unelco
C7 — 5-80 pF, Arco 462
C8,
C10, C14,
C16
—0.1
(iF
C9, C13 — 50 (IF, 50Vdc
C11, C12 — 680 pF, Feed Through
L1 — #16AWG, 1-1/4 Turns, 0.3" ID
L2 — #16 AWG Hairpin 1" long
«•
L3 — #14 AWG Hairpin 0.8" long
»• A
L4 — #14 AWG Hairpin 1.1" long
* ' I
RFC1 — Ferroxcube VK200-19/4B
RFC2 — 18 Turns #18 AWG Enameled, 0.3" ID
R1 — 10 kQ, 10 Turns Bourns
R2~-1.8Kft 1/4 W
R3 — 10
k£i,
1/2 W
Z1 — 1N5925A Motorola Zener
Figure 1. 150 MHz Test Circuit
Quality Semi-Conductors
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