^Etni-Conduatoi ZPioaucti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MRF148A
Product Image
Designed for power amplifier applications in industrial,
commercial and amateur radio equipment to 175MHz.
•
Superior high order IMD
IMD(d3) (SOW PEP): -35 dB (Typ.)
IMD(d11) (30W PEP): -60 dB (Typ.)
•
Specified 50V, 30MHz characteristics:
Output power: SOW
Gain: 18dB (Typ.)
Efficiency: 40% (Typ.)
100% tested for load mismatch at all phase angles
with 30:1 VSWR
Lower reverse transfer capacitance (3.0 pF typ.)
•
•
CASE 211-07,
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Dram-Gate Voltage
Gate-Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 26
C
C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance., Junction to Case
Symbol
Symbol
V
DSS
Value
Unit
120
120
±40
6.0
115
0.66
-65 to +150
Vdc
Vdc
Vdc
Adc
Watts
W/°C
VDGO
VGS
ID
PD
Tstg
°c
°C
Tj
200
Max
1.52
Unit
°C/W
Rejc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
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N.I VmK onductors enconntges customers to verify that datasheets are current before placing orders.
ELECTRICAL CHARACTERISTICS
(Tc = 25
5
C unless otherwise noted.)
Characteristic
Symbol
Win
125
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VQS
=
0, ID
=
10 mA)
Zero Gate Voltage Drain Current (Vfjs = 50 V, VQS = 0)
Gate-Body Leakage Current (VGS = 20 V, VDS = 0)
V
(BR)DSS
IDSS
IGSS
VQS(th)
v
DS(on)
—
—
1.0
1.0
0.8
—
—
—
2.5
3.0
1.2
—
1.0
100
Vdc
rnAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage (Vps = 10 V, ID = 10 mA)
Drain-Source Orv-Voltage (VQS = 10 V, ID = 2.5 A)
Forward Transconductance (VDS = 1 0 V, ID = 2.5 A)
5.0
5.0
—
Vdc
Vdc
mhos
9fs
DYNAMIC CHARACTERISTICS
Input Capacitance (V0S = 50 V, VGS = 0, f = 1 .0 MHz)
Output Capacitance (V
DS
= 50 V, V
GS
= 0, f = 1 .0 MHz)
Reverse Transfer Capacitance (VQS = 50 V, VQS = 0. f = 1 .0 MHz)
C
1SS
C
oss
Crss
—
—
—
62
35
3.0
—
—
—
PF
P
F
PF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
Drain Efficiency
<VDD = so v, Pout = 30 w (PEP), IDQ = 1 oo mA)
(VDD = 50 v, f = so MHZ. IDQ = 1 oo mA)
(175 MHZ)
(30 W PEP)
(30 MHz)
Gps
11
—
—
18
15
40
50
-35
-60
dB
—
(30 w cw)
%
—
dB
Intermodulation Distortion
(V
D
D = 50V.P
OU1
= 30W(PEP),
f = 30; 30.001 MHz. IDQ = 100 mA)
Load Mismatch
(VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz.
IDQ = 100 mA, VSWR 30:1 at all Phase Angles)
IMD(d3)
IMD(dH)
—
=
V
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
12=30.001 MHz. IDQ = 1.0 A)
(VDD = so v, p^ = 10 w (PEP), n = 30 MHZ.
IMD(
d
3)
IMO(d9-l3)
GPS
—
—
—
20
-50
-70
—
—
—
dB
NOTE:
I To MIL-STD-1311 Version A, Test Method 2204B, Two Tone. Reference Each Tone.
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