L/na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
The RF TMOS Line
RF Power Field-Effect Transistors
N-Channel Enhancement-Mode TMOS
designed for wideband large-signal amplifier and oscillator applications in the 2 to
400 MHz range, in either single ended or push-pull configuration.
• Guaranteed 28 Volt, 150 MHz Performance
MRF13B
MRF136Y
Output Power = 15 Watts
Output Power = 30 Watts
Narrowband Gain = 16 dB (Typ) Broadband Gain - 14 dB (Typ)
Efficiency = 54% (Typical)
Efficiency = 60% (Typical)
• Small-Signal and Large-Signal
Characterization
• 100% Tested For Load
Mismatch At All Phase
MRF136
Angles With 30:1 VSWR
• Space Saving Package For
Push-Pull Circuit
Applications— MRF136Y
» Excellent Thermal Stability,
Ideally Suited For Class A
Operation
• Facilitates Manual Gain
Control, ALC and
OS
Modulation Techniques
MAXIMUM RATINGS
Biting
^Drain-Source Voltage
Drain-Gate Voltage (RQS =
Gate-Source Voltage
Brain-Current — Continuous
Total Device Dissipation w TC = 25°C
Derate above 25°C
_j'°rage Temperature Range
^Operating Junction Temperature
HJERMAL
CHARACTERISTICS
Quricteriitie
.jjgrnal Resistance. Junction to Case
Symbol
Mix
1
MRF136
MRF136Y
15 W, 30 W 2-400 MHz
N-CHANNEL
TMOS BROADBAND
RF POWER FETs
MRF136
Symbol
Vuluc
MRF136
65
65
±40
2.5
MRF136V
65
65
Unit
Mill
VDSS
VDGR
VGS
ID
PD
T
»tg
Vdc
Vdc
Vdc
Adc
Want
W/°C
5
100
0.571
-65 to +150
200
55
0.314
°C
•C
Tj
MRF136
3.2
MRF136Y
1.75
Unit
RSJC
•c/w
B and Packaging — MOS dsvicei are tutcaptibla to damage from elcctroitatic charg*. ft»«»on«bl« prectution* in handling and packaging MOS
""••'
JL
iabn*v«d.
Quality Semi-Conductors
MRF136, MRF136Y
ELECTRICAL CHARACTERISTICS
(T
c
-
25°C unleu othenwne noted)
Chincterlitlc
OFF CHARACTERISTICS (NOTE 1)
Drain-Source Breakdown Voltage
(VQS - 0. ID • 5 mA)
Zero-Gate Voltage Drain Current
(V
DS
- 28 V, VGS - 01
Gate-Source Leakage Current
(VGS = 40 v, V
DS
- 01
ON CHARACTERISTICS (NOTE 1)
Gate Threshold Voltage
Symbol
TVP
66
Mix
Untt
VIBRIDSS
IDSS
IGSS
—
—
—
3
400
—
2
1
Vdc
mAde
AiAdc
—
—
1
250
(VDS = 10 v, ID - 25 mAi
Forward Transconductance
VGS(th)
6
—
Vdc
fflrflnOS
(VDS = 10 v. ID - 250 mA)
DYNAMIC CHARACTERISTICS (NOTE 1)
Input Capacitance
«t
Cis.
—
—
—
24
27
5.5
—
—
—
(VDS = 28 v, VQS = o, f = i M
H
'>
Output Capacitance
pF
pF
PF
(VDS = 28 v, VQS = o, i = i MHZ)
'•oat
C
r
.a
Reverse Transfer Capacitance
(v
os
- 28 v, VGS - "• ' -
1 MHz
>
FUNCTIONAL CHARACTERISTICS (NOTE 2)
Noise Figure
(V
D
S = 28 Vdc. ID = 500 mA, f = 150 MHz)
MRF136
NF
Gps
G
P«
—
13
12
50
50
1
16
14
60
54
—
—
—
—
—
dB
dB
dB
%
%
Common Source Power Gain (Figure 1)
MRF136
(V
DD
= 28 Vdc. Pout = 16 W, f = 180 MHz, I
D
Q = 25 mA)
Common Source Power Gain (Figure 2)
MRF136Y
(V
D
D = 28 Vdc, P
out
= 30 W, f = 150 MHz, I
D
Q = 100 mA)
Drain Efficiency (Figure 1)
MRF136
(VDD = 28 Vdc, P
out
= 15 W, f » 150 MHz, IDQ - 25 mA)
Drain Efficiency (Figure 2)
MRF136Y
(VDD = 28 Vdc, Pout = 30 W. f = 150 MHz, IDQ = 100 mA)
Electrical Ruggedness (Figure 1)
MRF136
(VDD = 28 Vdc. P
out
= 15 W, f
=
150 MHz, I
DQ
- 25 mA,
VSWR 30:1 at all Phase Angles)
Electrical Ruggedness (Figure 2)
MRF136Y
(VDD • 28 Vdc, P
out
- 30 W, f = 150 MHz. I
0
Q = 100 mA,
VSWR 30:1 at all Phase Angles)
Notn: 1. For MRF138Y, each lid. muiurtd Mparattly.
2. For MRF136Y meaiured in puih-pull configuration.
•n
1
</>
No Degradation in Output Power
No Degradation in Output Power
*
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