tSsmi-donduato'i ZPtoaucti, {Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode
.. . designed for wideband large-signal amplifier and oscillator applications up
to 400 MHz range.
•
Guaranteed 28 Volt, 150 MHz Performance
Output Power = 5.0 Watts
Minimum Gain = 11 dB
Efficiency — 55% (Typical)
Small-Signal and Large-Signal Characterization
Typical Performance at 400 MHz, 28 Vdc, 5.0 W
Output = 10.6 dB Gain
100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
Excellent Thermal Stability, Ideally Suited For Class A
Operation
MRF134
•
•
•
5.0 W, to 400 MHz
N-CHANNEL MOS
BROADBAND RF POWER
FET
« Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz
•
CASE 211-07,
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
(R
G
S = 1 -0 MQ)
Gate-Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
Symbol
Value
10
Symbol
V
DS$
Value
65
65
±40
0.9
17.5
0.1
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
VDGR
VGS
ID
PD
T
stg
Watts
W/°C
°c
Unit
RSJC
°c/w
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
NJ Semi-Conductois reserves the right to change test conditions, parameter limits and package dimensions without
not.ce. fnformat,on furnished b> NJ Semi-Conductors is believed to be both accurate
L
reliable at the tL o?
go
ng
to p««. However, NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use
M .Vrm-( unductors entourages customers to verify that datasheets are current before placing orders.
OiinlJfv
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS
=
0, ID = 5.0 mA)
Zero Gate Voltage Drain Current (VDS = 28 V, VQS = 0)
Gate-Source Leakage Current (Vgs
=
20 V, VDS
=
°)
ON CHARACTERISTICS
Gate Threshold Voltage (!Q = 10 mA, VDS = 10 V)
Forward Transconductance (VDS = 10 V, ID = 100 mA)
DYNAMIC CHARACTERISTICS
Input Capacitance
v
GS(th)
Symbol
Win
Typ
Max
Unit
V(BR)DSS
!
DSS
65
—
—
—
—
—
—
1.0
1.0
Vdc
mAdc
u.Adc
!GSS
1.0
80
3.5
110
6.0
—
Vdc
9fs
mmhos
(v
D
s =
28
v.
V
GS = o, f = 1 .0 MHZ)
Output Capacitance
Cjss
CQSS
c
rss
—
—
—
7.0
9.7
2.3
—
—
—
PF
pF
PF
(VDS =
28 v
-
V
GS = o, f = 1 .0 MHZ)
Reverse Transfer Capacitance
(V
DS
= 28 v, V
GS
= o, f = 1 .0 MHZ)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 28 Vdc, ID = 200 mA, f = 150 MHz)
Common Source Power Gain
(VDD = 28 Vdc, P
out
= 5.0 W, I
D
Q = 50 mA)
f =150 MHz (Fig. 1)
f = 400 MHz (Fig. 14)
Drain Efficiency (Fig. 1)
(VDD = 28 Vdc, P
out
= 5.0 W, f = 150 MHz, IDQ = 50 mA)
Electrical Ruggedness (Fig. 1)
(VDD = 28 Vdc, P
ou
t = 5.0 W, f = 150 MHz, IDQ = 50 mA,
VSWR 30:1 at all Phase Angles)
NF
G
ps
—
2.0
—
dB
dB
11
T!
V
50
14
10.6
55
—
—
%
No Degradation in Output Power
L4
R3*
R4
x
'
R2
1
™
i C5
v
k
^
1 C6 1
?k
'WV—
T°
(-7
n
i
/-p C8
J"
1
-
1
L3^
R5
|
l
rr\9
l
C10
-T*
C11
T
x
uu
1
-L
/^^v^^\
^J^
1
r-
^
1
L2
r
C4 ,
/DC r>i ITHI IT
t
•
<m
RF INPUT]
s
/
/^l
C1
yr
*
T
ly
•
L1
~-YVV
1 Mw^
/
1 1 !*n
^
OUT
?
fa
*Bias Adjust
C1.C4 —Arco406, 15-115 pF
C2 —Arco403, 3.0-35 pF
C3 —Arco402, 1.5-20pF
C5, C6, C7, C8, C12 — 0.1 nF Erie Redcap
C9 — 10 nF, 50V
C10, C11 —680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — 3 Turns, 0.310" ID, #18 AWG Enamel, 0.2" Long
L2 — 3-1/2 Turns, 0.310" ID, #18 AWG Enamel, 0.25" Long
L3 — 20 Turns, #20 AWG Enamel Wound on R5
L4 — Ferroxcube VK-200 — 19/4B
R1 — 68
O,
1.0 W Thin Film
R2 — 10 kQ, 1/4 W
R3 — 10 Turns, 10 k£i Beckman Instruments 8108
R4 — 1.8kQ, 1/2 W
R5 — 1.0 M£J, 2.0 W Carbon
Board —G10,62 mils
Figure 1.150 MHz Test Circuit
嵌入式系统
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